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Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces
http://hdl.handle.net/10228/2502
http://hdl.handle.net/10228/25025030ef6f-d0e7-4849-bc3a-572b70903377
名前 / ファイル | ライセンス | アクション |
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Adsorption.pdf (1.4 MB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2009-09-29 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
タイトル | Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
Khan, A. R
× Khan, A. R× Narita, Y× 並木, 章× Kato, A× Suemitsu, M |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θD. On the other hand, the indirect abstraction to form D2 molecules obeys a fourth-order rate law in θD. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D2 desorption exhibits time profiles different from those on the Si(1 0 0) surfaces. | |||||
書誌情報 |
Surface Science 巻 602, 号 11, p. 1979-1986, 発行日 2008-06-01 |
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出版社 | ||||||
出版者 | Elsevier | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.susc.2008.03.048 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0039-6028 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright © 2008 Elsevier B.V. All rights reserved. | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | FTIR | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Thermal desorption | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Plasma processing | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Atom-solid interactions | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Momentary coverages | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Time response | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | H-sticking; Hot complex | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
査読の有無 | ||||||
値 | yes | |||||
業績ID | ||||||
4EF778E394E1E7554925764000103A0E | ||||||
資料タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | Journal Article | |||||
著者別名 | ||||||
姓名 | Namiki, Akira | |||||
言語 | en | |||||
姓名 | 並木, 章 | |||||
言語 | ja | |||||
姓名 | ナミキ, アキラ | |||||
言語 | ja-Kana | |||||
著者所属 | ||||||
Department of Electrical Engineering, Kyushu Institute of Technology | ||||||
著者所属 | ||||||
Department of Electrical Engineering, Kyushu Institute of Technology | ||||||
著者所属 | ||||||
Department of Electrical Engineering, Kyushu Institute of Technology | ||||||
著者所属 | ||||||
Center for Interdisciplinary Research, Tohoku University | ||||||
著者所属 | ||||||
Center for Interdisciplinary Research, Tohoku University | ||||||
情報源 | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.sciencedirect.com/science/journal/00396028 | |||||
関連名称 | http://www.sciencedirect.com/science/journal/00396028 |