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半導体量子構造系におけるキャリアー量子捕獲および離脱機構
http://hdl.handle.net/10228/476
http://hdl.handle.net/10228/47647cad569-8012-4aff-8541-e9bdfcaa8a72
名前 / ファイル | ライセンス | アクション |
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16360157seika.pdf (1.0 MB)
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Item type | 研究報告書 = Research Paper(1) | |||||
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公開日 | 2007-12-06 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18ws | |||||
資源タイプ | research report | |||||
タイトル | ||||||
タイトル | 半導体量子構造系におけるキャリアー量子捕獲および離脱機構 | |||||
言語 | ||||||
言語 | jpn | |||||
著者 |
藤原, 賢三
× 藤原, 賢三 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | <はしがき>この報告書は、平成16年度から3年間にわたり実施したInGaN量子井戸構造を有する発光ダイオードの発光効率に関する研究をまとめたものである。エレクトロルミネッセンス効率の注入電流と温度依存性、フォトルミネッセンス発光効率の外部バイアスと温度依存性、光励起波長依存性、光励起強度依存性についての結果を総合的にまとめたものである。 | |||||
備考 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 平成16年度~平成18年度科学研究費補助金(基盤研究(B)) 研究成果報告書 | |||||
書誌情報 | 発行日 2007-06 | |||||
出版社 | ||||||
出版者 | 九州工業大学 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | quantum wells | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ⅲ-nitride semiconductors | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | light-emitting-diodes | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | photoluminessence | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | electroluminescence | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InGaN | |||||
査読の有無 | ||||||
値 | no | |||||
科研課題番号 | ||||||
16360157 | ||||||
著者所属 | ||||||
九州工業大学工学部 | ||||||
備考 | ||||||
別刷論文(8-11,13-16,25-28,30-34,36-39,44-47,49-78)削除 / 登録別刷論文(1)Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer. JOURNAL OF APPLIED PHYSICS 100, 113105 (2006) (7pages) © 2006 American Institute of Physics, https://doi.org/10.1063/1.2398690 / 登録別刷論文(2)Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions. Appl. Phys. Lett. 90, 161109 (2007) (3pages) © 2007 American Institute of Physics, https://doi.org/10.1063/1.2723683 |