Kyushu Institute of Technology Academic Repository
Kyutacarは九州工業大学で生産された研究成果を オープンアクセスで提供する機関リポジトリシステムです。 Kyutacar is open-access repository of research by members of the Kyushu Institute of Technology.
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin,
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin,
抄録
We have investigated the effect of different cladding layer configurations on the photoluminescence (PL) properties of GaAs triple quantum wells (QWs) with different well thicknesses (Lz=7.8, 5.5, and 3.5 nm) embedded in Al0.17Ga0.83As barriers. In sample 1, the cladding layers consist of ternary alloy Al0.3Ga0.7As layers, while in sample 2 they are formed by GaAs/AlAs short period superlattices. At low temperatures, the cw PL spectra for sample 1 show a non-uniform intensity distribution over the three QW excitionic lines. The PL intensity for the widest QW (7.8 nm) is much weaker than that for the other QWs. Furthermore, an anomalous temperature dependence of the PL transients of the widest QW is observed, which differs from the one expected for the excitonic radiative recombination lifetime. However, sample 2 exhibits the typical temperature dependence of the PL lifetime. The temperature dependence of the PL dynamics indicates that the non-uniform distribution of the PL intensity at low temperatures in the former sample is a result of a competition between carrier relaxation and capture processes.
Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands
ISCSRv2.pdf
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