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Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes
http://hdl.handle.net/10228/307
http://hdl.handle.net/10228/30755f85911-9c7d-48ae-bd16-005da546ccd1
名前 / ファイル | ライセンス | アクション |
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6040PHYSE_MSS11-PW-KF_final.pdf (538.4 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2007-11-14 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Bakmiwewa, P
× Bakmiwewa, P× Hori, A× 佐竹, 昭泰
WEKO
252
× 藤原, 賢三 |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | Temperature dependence of the electroluminescence (EL) spectral intensity is investigated in thesuper-bright green InGaN single-quantum-well diode under low injection currents down to 0.01 mA. It isfound that a temperature dependent variation pattern of the EL efficiency under very low and highinjection currents shows a drastic difference. That is, when the current is low and thus the forward drivingvoltage is small, the EL intensity persists to increase with decreasing temperature due to the reducednonradiative recombinations and the efficient carrier capture by the active region. On the other hand,when the injection current is high and the forward voltage is large, the EL intensity is significantlyreduced at temperatures below 100 K. This unique EL efficiency variation pattern with temperature andcurrent is explained by external field effects due to the driving forward bias in the presence of internal(piezo and spontaneous polarization) fields. | |||||||||||
書誌情報 |
Physica E: Low-dimensional Systems and Nanostructures 巻 21, 号 2-4, p. 636-640, 発行日 2004-03 |
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出版社 | ||||||||||||
出版者 | Elsevier | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1016/j.physe.2003.11.094 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 1386-9477 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright (c) 2003 Elsevier B.V. | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | Semiconductor quantum well | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | Electroluminescence | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | InGaN | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | LED | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Journal Article | |||||||||||
著者別名 | ||||||||||||
姓名 | Fujiwara, Kenzo | |||||||||||
言語 | en | |||||||||||
姓名 | 藤原, 賢三 | |||||||||||
言語 | ja | |||||||||||
姓名 | フジワラ, ケンゾウ | |||||||||||
言語 | ja-Kana | |||||||||||
著者別名 | ||||||||||||
姓名 | Satake, Akihiro | |||||||||||
言語 | en | |||||||||||
姓名 | 佐竹, 昭泰 | |||||||||||
言語 | ja | |||||||||||
姓名 | サタケ, アキヒロ | |||||||||||
言語 | ja-Kana | |||||||||||
著者所属 | ||||||||||||
Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Fukuoka 804-8550, Japan | ||||||||||||
情報源 | ||||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | http://www.sciencedirect.com/science/journal/13869477 | |||||||||||
関連名称 | http://www.sciencedirect.com/science/journal/13869477 |