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Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation
http://hdl.handle.net/10228/00008405
http://hdl.handle.net/10228/00008405655b3eaf-e07a-44ad-82bb-87a35945ac41
名前 / ファイル | ライセンス | アクション |
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10367529.pdf (2.9 MB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2021-07-16 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Inenaga, Kohei
× Inenaga, Kohei× Motomura, Ryo× 石丸, 学
WEKO
25703
× Nakamura, Ryusuke× Yasuda, Hidehiro |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn). | |||||||||||
書誌情報 |
Journal of Applied Physics 巻 127, 号 20, p. 205304, 発行日 2020-05-26 |
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出版社 | ||||||||||||
出版者 | AIP Publishing | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1063/5.0006416 | |||||||||||
日本十進分類法 | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 459 | |||||||||||
NCID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00693547 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 0021-8979 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 1089-7550 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics and may be found at https://aip.scitation.org/doi/abs/10.1063/5.0006416. | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
研究者情報 | ||||||||||||
https://hyokadb02.jimu.kyutech.ac.jp/html/100000642_ja.html | ||||||||||||
論文ID(連携) | ||||||||||||
10367529 | ||||||||||||
連携ID | ||||||||||||
9024 | ||||||||||||
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内容記述タイプ | Other | |||||||||||
内容記述 | Journal Article | |||||||||||
著者別名 | ||||||||||||
姓名 | Inenaga, K. | |||||||||||
著者別名 | ||||||||||||
姓名 | Motomura, R. | |||||||||||
著者別名 | ||||||||||||
姓名 | Ishimaru, Manabu | |||||||||||
言語 | en | |||||||||||
姓名 | 石丸, 学 | |||||||||||
言語 | ja | |||||||||||
姓名 | イシマル, マナブ | |||||||||||
言語 | ja-Kana | |||||||||||
著者別名 | ||||||||||||
姓名 | Nakamura, R. | |||||||||||
著者別名 | ||||||||||||
姓名 | Yasuda, H. | |||||||||||
著者所属 | ||||||||||||
Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Osaka Prefecture University | ||||||||||||
著者所属 | ||||||||||||
Osaka University |