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Interfacial solid‐state reaction at thermally oxidized In1−xGaxAsyP1−y alloys
http://hdl.handle.net/10228/1505
http://hdl.handle.net/10228/1505e90f7a75-e3aa-4b1a-9cde-cd21be1965d2
名前 / ファイル | ライセンス | アクション |
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kohiki_23.pdf (95.8 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2009-02-20 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Interfacial solid‐state reaction at thermally oxidized In1−xGaxAsyP1−y alloys | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
Kubo, M
× Kubo, M× Sasai, Y× Ogura, M× 古曵, 重美 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The interfacial reaction between thermally oxidized In1−xGaxAsyP1−y and an In1−xGaxAsyP1−y epilayer was studied using Raman and x-ray photoelectron spectroscopy (XPS) analyses. In Raman spectra, it was found that the appearance of the phonon modes, i.e., the first-order longitudinal (LO) and transverse-optical (TO) modes for crystalline arsenic, was due to the In1−xGaxAsyP1−y -oxide interfacial reaction. The XPS analyses showed that this reaction corresponded to the GaAs-oxide interfacial reaction, i.e., As2O3+2GaAsGa2O3+4As. Furthermore, the reaction depends on the composition y of In1−xGaxAsyP1−y, which may be due to the enhancement in the initial transient reaction by thermal damage of In1−xGaxAsyP1−y occurring at the interface. Journal of Applied Physics is copyrighted by The American Institute of Physics. | |||||
書誌情報 |
Journal of Applied Physics 巻 64, 号 1, p. 184-187, 発行日 1988-01-01 |
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出版社 | ||||||
出版者 | American Institute of Physics | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1063/1.341460 | |||||
NAID | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | NAID | |||||
関連識別子 | 120002441246 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright © 1988 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | surface Reactions | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | interface phenomena | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | indium arsenides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | gallium arsenides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | indium phosphides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | gallium phosphides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | phonon spectra | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | raman spectra | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | optical phonons | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | optical modes | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | x radiation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | photoelectron spectroscopy | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
査読の有無 | ||||||
値 | yes | |||||
業績ID | ||||||
809B5F4E699E5DC449257561002020AF | ||||||
資料タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | Journal Article | |||||
著者別名 | ||||||
姓名 | Kohiki, Shigemi | |||||
言語 | en | |||||
姓名 | 古曵, 重美 | |||||
言語 | ja | |||||
姓名 | コヒキ, シゲミ | |||||
言語 | ja-Kana | |||||
著者所属 | ||||||
Matsushita Technores Inc | ||||||
情報源 | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.aip.org/ | |||||
関連名称 | http://www.aip.org/ | |||||
情報源 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.341460 | |||||
関連名称 | https://doi.org/10.1063/1.341460 |