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Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes
http://hdl.handle.net/10228/360
http://hdl.handle.net/10228/36026f889f5-8bef-4c27-87e0-de8dcbbc19df
名前 / ファイル | ライセンス | アクション |
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1.1806268.pdf (58.6 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2007-11-19 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
佐竹, 昭泰
× 佐竹, 昭泰
WEKO
252
× Tanigawa, K.× Kimura, T.× 藤原, 賢三× Sano, N. |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of ~0.1 Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1–xAs quantum-well regions. | |||||||||||
言語 | en | |||||||||||
書誌情報 |
en : Applied Physics Letters 巻 85, 号 16, p. 3483-3485, 発行日 2004-10-18 |
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出版社 | ||||||||||||
言語 | en | |||||||||||
出版者 | American Institute of Physics | |||||||||||
DOI | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1063/1.1806268 | |||||||||||
CRID | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | https://cir.nii.ac.jp/crid/1573950402372970752 | |||||||||||
日本十進分類法 | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 425 | |||||||||||
NCID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00543431 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | EISSN | |||||||||||
収録物識別子 | 1077-3118 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0003-6951 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright © 2004 American Institute of Physics | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | indium compounds | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | aluminium compounds | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | gallium arsenide | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | semiconductor quantum wells | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | quantum well devices | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | p-i-n diodes | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | photoconductivity | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | photoemission | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | electron traps | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | hole traps | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
著者別名 |