WEKO3
アイテム
{"_buckets": {"deposit": "e4756ba3-9edd-4282-973d-4e2265a27df3"}, "_deposit": {"created_by": 3, "id": "148", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "148"}, "status": "published"}, "_oai": {"id": "oai:kyutech.repo.nii.ac.jp:00000148", "sets": ["24"]}, "author_link": ["718", "719", "720", "721", "1138"], "control_number": "148", "item_21_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2003-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "7", "bibliographicPageEnd": "2226", "bibliographicPageStart": "2223", "bibliographicVolumeNumber": "0", "bibliographic_titles": [{"bibliographic_title": "Physica status solidi. C, Conferences and critical reviews", "bibliographic_titleLang": "en"}]}]}, "item_21_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD depend significantly onlow-energy electron-beam irradiation (LEEBI), e. g., during cathodoluminescence (CL) investigations,when a certain exposure dose is exceeded. For unintentionally doped structures, we observe a LEEBIinducedactivation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantumefficiency and optical transition energy increases significantly by LEEBI. The electric field distributionin a p-n structure is changed towards the flat band condition during LEEBI indicating an electron-beaminducedpassivation of acceptors in the p-type layer.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_21_description_5": {"attribute_name": "備考", "attribute_value_mlt": [{"subitem_description": "5th International Conference on Nitride Semiconductors (ICNS‐5), 25–30 May, 2003, Nara, Japan", "subitem_description_language": "en", "subitem_description_type": "Other"}]}, "item_21_publisher_7": {"attribute_name": "出版社", "attribute_value_mlt": [{"subitem_publisher": "Wiley"}]}, "item_21_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1002/pssc.200303290", "subitem_relation_type_select": "DOI"}}]}, "item_21_rights_13": {"attribute_name": "著作権関連情報", "attribute_value_mlt": [{"subitem_rights": "Copyright (c) 2003 WILEY-VCH Verlag GmbH \u0026 Co., physica status solidi (C),Issue 7,p2223-2226"}]}, "item_21_select_59": {"attribute_name": "査読の有無", "attribute_value_mlt": [{"subitem_select_item": "yes"}]}, "item_21_source_id_10": {"attribute_name": "NCID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11896717", "subitem_source_identifier_type": "NCID"}]}, "item_21_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1610-1634", "subitem_source_identifier_type": "PISSN"}]}, "item_21_version_type_58": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Jahn, U", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "718", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Dhar, S", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "719", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kostial, H", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "720", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Watson, I.M", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "721", "nameIdentifierScheme": "WEKO"}]}, {"creatorAffiliations": [{"affiliationNames": [{"affiliationNameLang": "ja"}]}], "creatorNames": [{"creatorName": "Fujiwara, Kenzo", "creatorNameLang": "en"}, {"creatorName": "藤原, 賢三", "creatorNameLang": "ja"}, {"creatorName": "フジワラ, ケンゾウ", "creatorNameLang": "ja-Kana"}], "familyNames": [{"familyName": "Fujiwara", "familyNameLang": "en"}, {"familyName": "藤原", "familyNameLang": "ja"}, {"familyName": "フジワラ", "familyNameLang": "ja-Kana"}], "givenNames": [{"givenName": "Kenzo", "givenNameLang": "en"}, {"givenName": "賢三", "givenNameLang": "ja"}, {"givenName": "ケンゾウ", "givenNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1138", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "90243980", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000090243980"}, {"nameIdentifier": "7403468236", "nameIdentifierScheme": "Scopus著者ID", "nameIdentifierURI": "https://www.scopus.com/authid/detail.uri?authorId=7403468236"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2007-11-22"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "MsICNS-5(Jahn).pdf", "filesize": [{"value": "111.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 111200.0, "url": {"label": "MsICNS-5(Jahn).pdf", "url": "https://kyutech.repo.nii.ac.jp/record/148/files/MsICNS-5(Jahn).pdf"}, "version_id": "03bd395f-b632-451a-beba-a3ed0a9670d0"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "78.60.Hk", "subitem_subject_scheme": "Other"}, {"subitem_subject": "78.66.Fd", "subitem_subject_scheme": "Other"}, {"subitem_subject": "78.67.De", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Low-energy electron-beam irradiation of GaN-based quantum well structures", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Low-energy electron-beam irradiation of GaN-based quantum well structures", "subitem_title_language": "en"}]}, "item_type_id": "21", "owner": "3", "path": ["24"], "permalink_uri": "http://hdl.handle.net/10228/393", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2007-11-22"}, "publish_date": "2007-11-22", "publish_status": "0", "recid": "148", "relation": {}, "relation_version_is_last": true, "title": ["Low-energy electron-beam irradiation of GaN-based quantum well structures"], "weko_shared_id": -1}
Low-energy electron-beam irradiation of GaN-based quantum well structures
http://hdl.handle.net/10228/393
http://hdl.handle.net/10228/393ffb8919a-9287-4e1c-83fe-55c27bb8baa5
名前 / ファイル | ライセンス | アクション |
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MsICNS-5(Jahn).pdf (111.2 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2007-11-22 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Low-energy electron-beam irradiation of GaN-based quantum well structures | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
Jahn, U
× Jahn, U× Dhar, S× Kostial, H× Watson, I.M× 藤原, 賢三 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD depend significantly onlow-energy electron-beam irradiation (LEEBI), e. g., during cathodoluminescence (CL) investigations,when a certain exposure dose is exceeded. For unintentionally doped structures, we observe a LEEBIinducedactivation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantumefficiency and optical transition energy increases significantly by LEEBI. The electric field distributionin a p-n structure is changed towards the flat band condition during LEEBI indicating an electron-beaminducedpassivation of acceptors in the p-type layer. | |||||
言語 | en | |||||
備考 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 5th International Conference on Nitride Semiconductors (ICNS‐5), 25–30 May, 2003, Nara, Japan | |||||
言語 | en | |||||
書誌情報 |
en : Physica status solidi. C, Conferences and critical reviews 巻 0, 号 7, p. 2223-2226, 発行日 2003-10 |
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出版社 | ||||||
出版者 | Wiley | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1002/pssc.200303290 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11896717 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 1610-1634 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright (c) 2003 WILEY-VCH Verlag GmbH & Co., physica status solidi (C),Issue 7,p2223-2226 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 78.60.Hk | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 78.66.Fd | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 78.67.De | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
査読の有無 | ||||||
値 | yes |