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Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions
http://hdl.handle.net/10228/540
http://hdl.handle.net/10228/5400b12f317-fd31-41f3-adb3-8da1497c0718
名前 / ファイル | ライセンス | アクション |
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67.pdf (305.9 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2007-12-20 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
Inoue, T
× Inoue, T× 藤原, 賢三 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Photoluminescence (PL) properties of a blue In0.3Ga0.7N multiple-quantum-well (MQW) diode with an additional n+-doped In0.18Ga0.82N electron reservoir layer (ERL) have been investigated at 20 K as a function of reverse bias under indirect barrier excitation. A PL intensity ratio of MQW/ERL is observed to be significantly quenched by increasing the reverse field due to electron-hole separation and carrier escape, in spite of observed blueshifts, when the excitation power is decreased by two orders of magnitude. The PL intensity reduction suggests that the hole escape process plays an important role for determination of the PL efficiency under the reverse bias. | |||||
書誌情報 |
Applied Physics Letters 巻 90, 号 16, p. 161109-1-161109-3, 発行日 2007-04-17 |
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出版社 | ||||||
出版者 | American Institute of Physics | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2723683 | |||||
論文ID(NAID) | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | NAID | |||||
関連識別子 | 120002440723 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 427 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright © 2007 American Institute of Physics | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | indium compounds | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | gallium compounds | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | III-V semiconductors | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | wide band gap semiconductors | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | quantum well devices | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | semiconductor diodes | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | spectral line shift | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
査読の有無 | ||||||
値 | yes | |||||
資料タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | Journal Article | |||||
著者別名 | ||||||
姓名 | Fujiwara, Kenzo | |||||
言語 | en | |||||
姓名 | 藤原, 賢三 | |||||
言語 | ja | |||||
姓名 | フジワラ, ケンゾウ | |||||
言語 | ja-Kana | |||||
著者所属 | ||||||
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan | ||||||
情報源 | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.aip.org/ | |||||
関連名称 | http://www.aip.org/ |