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Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film
http://hdl.handle.net/10228/577
http://hdl.handle.net/10228/577057533be-12d4-4738-818f-912bf66bf918
名前 / ファイル | ライセンス | アクション |
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100.pdf (287.9 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2007-12-27 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Takashiri, M
× Takashiri, M× Borca-Tasciuc, T× Jacquot, A× 宮崎, 康次
WEKO
679
× Chen, G |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | The structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin films are investigated for potential application in microthermoelectric devices. Nanocrystalline Si0.8Ge0.2 thin films are grown by low-pressure chemical vapor deposition on a sandwich of Si3N4/SiO2/Si3N4 films deposited on a Si (100) substrate. The Si0.8Ge0.2 film is doped with boron by ion implantation. The structure of the thin film is studied by means of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It is found that the film has column-shaped crystal grains ~100 nm in diameter oriented along the thickness of the film. The electrical conductivity and Seebeck coefficient are measured in the temperature range between 80–300 and 130–300 K, respectively. The thermal conductivity is measured at room temperature by a 3 method. As compared with bulk silicon-germanium and microcrystalline film alloys of nearly the same Si/Ge ratio and doping concentrations, the Si0.8Ge0.2 nanocrystalline film exhibits a twofold reduction in the thermal conductivitity, an enhancement in the Seebeck coefficient, and a reduction in the electrical conductivity. Enhanced heat carrier scattering due to the nanocrystalline structure of the films and a combined effect of boron segregation and carrier trapping at grain boundaries are believed to be responsible for the measured reductions in the thermal and electrical conductivities, respectively. | |||||||||||
書誌情報 |
Journal of Applied Physics 巻 100, 号 5, p. 054315-1-054315-5, 発行日 2006-09-14 |
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出版社 | ||||||||||||
出版者 | American Institute of Physics | |||||||||||
DOI | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1063/1.2337392 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 0021-8979 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright © 2006 American Institute of Physics | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | boron | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | Ge-Si alloys | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | semiconductor materials | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | nanostructured materials | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | semiconductor thin films | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | Seebeck effect | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | atomic force microscopy | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | X-ray diffraction | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | transmission electron microscopy | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | electrical conductivity | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | thermal conductivity | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | impurity distribution | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | segregation, | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | grain boundaries | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Journal Article | |||||||||||
著者別名 | ||||||||||||
姓名 | Miyazaki, Koji | |||||||||||
言語 | en | |||||||||||
姓名 | 宮崎, 康次 | |||||||||||
言語 | ja | |||||||||||
姓名 | ミヤザキ, コウジ | |||||||||||
言語 | ja-Kana | |||||||||||
著者所属 | ||||||||||||
Research Division, Komatsu Ltd., 1200 Manda, Hiratsuka, Kanagawa 254-8567, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 | ||||||||||||
著者所属 | ||||||||||||
Frainhofer Institut Physikalische Messtechnik, Heidenhofstrasse 8, D-79110 Freiburgi. Br., Germany | ||||||||||||
著者所属 | ||||||||||||
Department of Biological Functions and Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan | ||||||||||||
著者所属 | ||||||||||||
Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 |