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X-ray reciprocal space maps and x-ray scattering topographic observation of GaN layer on GaAs (001) in plasma-assisted molecular beam epitaxy
http://hdl.handle.net/10228/4540
http://hdl.handle.net/10228/4540f9383d78-4eb0-4ce9-b7a0-2ca1c89f3fd2
名前 / ファイル | ライセンス | アクション |
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101_063516.pdf (283.3 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2010-02-03 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | X-ray reciprocal space maps and x-ray scattering topographic observation of GaN layer on GaAs (001) in plasma-assisted molecular beam epitaxy | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
鈴木, 芳文
× 鈴木, 芳文
WEKO
13047
× Shinbara, Masakazu× Kii, Hideki× Chikaura, Yoshinori |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | We have characterized plasma-assisted N+ molecular beam epitaxy-grown polymorphous GaN epitaxial layer on GaAs by x-ray reciprocal mapping using four-circle x-ray diffractometer and a personal computer controlled x-ray scattering topography system by ourselves. x-ray reciprocal mapping indicates that GaN wurtzite epitaxial film was grown along only [[overline 1][overline 1]1] direction. While GaN wurtzite and zinc-blende crystals were contracted along the surface normal, those of lattice constants were expanded along lateral direction. The values of expansion were larger than our instrumental resolution. The lateral expansion rate of lattice constants in GaN wurtzite was larger than that in GaN zinc blende. It was found that zinc-blende phase was unevenly distributed, but wurtzite one was uniformly distributed by growth condition. | |||||||||||
書誌情報 |
Journal of Applied Physics 巻 101, 号 6, p. 063516, 発行日 2007-05-21 |
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出版社 | ||||||||||||
出版者 | American Institute of Physics | |||||||||||
DOI | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1063/1.2712166 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | ©2007 American Institute of Physics | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | gallium compounds | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | III-V semiconductors | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | wide band gap semiconductors | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | semiconductor epitaxial layers | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | X-ray scattering | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | X-ray diffraction | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | X-ray crystallography | |||||||||||
キーワード | ||||||||||||
主題Scheme | Other | |||||||||||
主題 | lattice constants | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
業績ID | ||||||||||||
C4F89087AE7085F3492576BE000F8CB6 | ||||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Journal Article | |||||||||||
著者別名 | ||||||||||||
姓名 | Suzuki, Yoshifumi | |||||||||||
言語 | en | |||||||||||
姓名 | 鈴木, 芳文 | |||||||||||
言語 | ja | |||||||||||
姓名 | スズキ, ヨシフミ | |||||||||||
言語 | ja-Kana | |||||||||||
著者所属 | ||||||||||||
Graduate School of Engineering, Kyushu Institute of Technology |