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Field-dependent nonlinear luminescence response of (In,Ga)N/GaN quantum wells
http://hdl.handle.net/10228/642
http://hdl.handle.net/10228/6425ddac4e8-0b58-4155-95ff-99384cbbdbd1
名前 / ファイル | ライセンス | アクション |
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e115323.pdf (109.5 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2008-01-09 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Field-dependent nonlinear luminescence response of (In,Ga)N/GaN quantum wells | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
Jahn, U
× Jahn, U× Dhar, S× Ramsteiner, M× 藤原, 賢三 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We have investigated the electric-field- and excitation-density-induced variation of the optical transition energy and cathodoluminescence (CL) as well as photoluminescence intensity of a single (In,Ga)N/GaN quantum well deposited in the depletion region of a p-n junction. The electric-field dependence of the transition energy is significantly influenced by field screening in the depletion region due to the excited carriers and by filling of band tail states of localized excitons. The electric-field dependence of the CL intensity is characterized by an abrupt and strong quenching mainly due to drift of excited carriers in the depletion region. A gradual screening of the p-n junction field with increasing excitation density causes a strongly nonlinear CL response. We describe this nonlinear behavior theoretically by a rate equation model. | |||||
書誌情報 |
Physical review B. Condensed matter and materials physics 巻 69, 号 11, p. 115323-1-115323-8, 発行日 2004-03-19 |
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出版社 | ||||||
出版者 | Published by the American Physical Society through the American Institute of Physics | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1103/PhysRevB.69.115323 | |||||
NAID | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | NAID | |||||
関連識別子 | 120002440820 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 429 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11187113 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 1098-0121 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright © 2004 American Physical Society | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
査読の有無 | ||||||
値 | yes | |||||
資料タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | Journal Article | |||||
著者別名 | ||||||
姓名 | Fujiwara, Kenzo | |||||
言語 | en | |||||
姓名 | 藤原, 賢三 | |||||
言語 | ja | |||||
姓名 | フジワラ, ケンゾウ | |||||
言語 | ja-Kana | |||||
著者所属 | ||||||
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany | ||||||
著者所属 | ||||||
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany | ||||||
著者所属 | ||||||
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany | ||||||
著者所属 | ||||||
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan | ||||||
情報源 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1103/PhysRevB.69.115323 | |||||
情報源 | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.aps.org/ | |||||
関連名称 | http://www.aps.org/ |