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Temperature-dependent Magnetoresistance Effects in Fe3Si/FeSi2/Fe3Si Trilayered Spin Valve Junctions
http://hdl.handle.net/10228/00007116
http://hdl.handle.net/10228/000071161dda6c6c-34a1-45e7-9ad8-f33770562bb9
名前 / ファイル | ライセンス | アクション |
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scunit-2018_47.pdf (3.0 MB)
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Item type | 会議発表論文 = Conference Paper(1) | |||||||||||
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公開日 | 2019-04-02 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
資源タイプ | conference paper | |||||||||||
タイトル | ||||||||||||
タイトル | Temperature-dependent Magnetoresistance Effects in Fe3Si/FeSi2/Fe3Si Trilayered Spin Valve Junctions | |||||||||||
その他のタイトル | ||||||||||||
その他のタイトル | Temperature-dependent magnetoresistance effects in FeSi/FeSi/FeSi trilayered spin valve junctions | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Ishibashi, Kazuya
× Ishibashi, Kazuya× Kudo, Kazuki× Nakashima, Kazutoshi× Asai, Yuki× Sakai, Ken-ichiro× 出口, 博之
WEKO
1115
× Yoshitake, Tsuyoshi |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | Fe3Si/FeSi2/Fe3Si trilayered junctions were fabricated by facing targets direct-current sputtering combined with a mask method, and the spin valve signals of the junctions were studied in the temperature range from 50 to 300 K. Whereas the magnetoresistance ratio of giant magnetoresistance and tunnel magnetoresistance junctions monotonically increases with decreasing temperature, that of our samples has the maximum value around 80 K and decreases with decreasing temperature at lower than 80 K, which might be due to an increase in the electrical conductivity mismatch between the metallic Fe3Si layers and semiconducting FeSi2 interlayer in the low temperature range. | |||||||||||
備考 | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Asia-Pacific Conference on Semiconducting Silicides and Related Materials — Science and Technology Towards Sustainable Electronics (APAC Silicide 2016), July 16-18, 2016, Fukuoka, Japan | |||||||||||
書誌情報 |
JJAP Conference Proceedings 巻 5, p. 011501-1-011501-8, 発行日 2016-07-18 |
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出版社 | ||||||||||||
出版社 | 応用物理学会 | |||||||||||
DOI | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.7567/JJAPCP.5.011501 | |||||||||||
ISBN | ||||||||||||
識別子タイプ | ISBN | |||||||||||
関連識別子 | 978-4-86348-617-1 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Copyright (c) 2017 The Author(s). Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
連携ID | ||||||||||||
7595 | ||||||||||||
著者所属 | ||||||||||||
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Control and Information Systems Engineering, National Institute of Technology, Kurume College, Kurume, Fukuoka 830-8555, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Basic Sciences, Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan | ||||||||||||
著者所属 | ||||||||||||
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan | ||||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Conference Paper |