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Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications
http://hdl.handle.net/10228/00007279
http://hdl.handle.net/10228/00007279e05560e2-5b4c-4596-b036-fa387339a577
名前 / ファイル | ライセンス | アクション |
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nperc94.pdf (350.5 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2019-07-04 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
安部, 征哉
× 安部, 征哉× Hasegawa, K.× Tsukuda, M.× Wada, K.× 大村, 一郎
WEKO
16176
× Ninomiya, T. |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | The shoot-through phenomenon has not been fully discussed for high-power inverters with IGBTs. This is because a negative gate voltage is applied to IGBTs during off states. Recently, attention is paid to an improved gate driver with only a positive gate voltage in order to meet demands for simplification, integration, and reduction in power consumption as well as in cost of the gate driver. Moreover, the threshold voltage of the next-generation IGBT will decrease with microfabrication techniques of the gate structure. This will make the shoot-through phenomenon severer and degrade the inverter reliability with the next-generation IGBTs. The influence of the parasitic parameters in both the IGBT and circuit on the shoot-through mechanism has not been investigated so far.This paper clarifies the shoot-through mechanism and investigates the impact of the next generation IGBTs on the inverter reliability. The influence of the internal capacitance of IGBT including stray inductance on inverter reliability is experimentally confirmed. | |||||||||||
書誌情報 |
Microelectronics Reliability 巻 76-77, p. 465-469, 発行日 2017-07-04 |
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出版社 | ||||||||||||
出版者 | Elsevier | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | info:doi/10.1016/j.microrel.2017.06.087 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 0026-2714 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | Elsevier | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
連携ID | ||||||||||||
6485 | ||||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Journal Article | |||||||||||
著者所属 | ||||||||||||
Department of Life Science and System Engineering, Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Department of Life Science and System Engineering, Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Green Electronics Research Institute | ||||||||||||
著者所属 | ||||||||||||
Department of Electrical and Electronic Engineering, Tokyo Metropolitan University | ||||||||||||
著者所属 | ||||||||||||
Department of Life Science and System Engineering, Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Green Electronics Research Institute | ||||||||||||
情報源 | ||||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1016/j.microrel.2017.06.087 |