WEKO3
アイテム
{"_buckets": {"deposit": "e7d797e4-da7f-48ca-a2f5-720153aa5c9d"}, "_deposit": {"created_by": 3, "id": "6786", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "6786"}, "status": "published"}, "_oai": {"id": "oai:kyutech.repo.nii.ac.jp:00006786", "sets": ["20"]}, "author_link": ["16176", "28762"], "item_23_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-09", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "D-9-06", "bibliographic_titles": [{"bibliographic_title": "2020 International Conference on Solid State Devices and Materials (SSDM2020)"}]}]}, "item_23_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "In this paper, we calculated the failure rate of high power semiconductor devices due to cosmic ray neutrons induced breakdown. This failure is found to occur during reverse bias condition at a voltage, which in practice well below the actual breakdown voltage of the device. Power semiconductor devices operating at airplane altitudes are more susceptible to this failure compare to the terrestrial operation. ", "subitem_description_type": "Abstract"}]}, "item_23_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "International Conference on Solid State Devices and Materials (SSDM2020), September 27-30, 2020, Toyama, Japan(新型コロナ感染拡大に伴い、現地開催中止)", "subitem_description_type": "Other"}]}, "item_23_description_60": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "Conference Paper", "subitem_description_type": "Other"}]}, "item_23_publisher_7": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "応用物理学会"}]}, "item_23_relation_14": {"attribute_name": "情報源", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "http://www.ssdm.jp/2020/index.html"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://www.ssdm.jp/2020/index.html", "subitem_relation_type_select": "URI"}}]}, "item_23_rights_13": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "The copyright of this paper belongs to The Japan Society of Applied Physics. Copyright (c) 2020 The Japan Society of Applied Physics"}]}, "item_23_select_59": {"attribute_name": "査読の有無", "attribute_value_mlt": [{"subitem_select_item": "yes"}]}, "item_23_text_37": {"attribute_name": "著者所属", "attribute_value_mlt": [{"subitem_text_value": "Kyushu Institute of Technology"}, {"subitem_text_value": "Kyushu Institute of Technology"}]}, "item_23_text_62": {"attribute_name": "連携ID", "attribute_value_mlt": [{"subitem_text_value": "8516"}]}, "item_23_version_type_58": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Gollapudi, Srikanth"}], "nameIdentifiers": [{"nameIdentifier": "28762", "nameIdentifierScheme": "WEKO"}]}, {"creatorAffiliations": [{"affiliationNameIdentifiers": [], "affiliationNames": [{"affiliationName": "", "affiliationNameLang": "ja"}]}], "creatorNames": [{"creatorName": "Omura, Ichiro", "creatorNameLang": "en"}, {"creatorName": "大村, 一郎", "creatorNameLang": "ja"}, {"creatorName": "オオムラ, イチロウ", "creatorNameLang": "ja-Kana"}], "familyNames": [{"familyName": "Omura", "familyNameLang": "en"}, {"familyName": "大村", "familyNameLang": "ja"}, {"familyName": "オオムラ", "familyNameLang": "ja-Kana"}], "givenNames": [{"givenName": "Ichiro", "givenNameLang": "en"}, {"givenName": "一郎", "givenNameLang": "ja"}, {"givenName": "イチロウ", "givenNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "16176", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "10510670", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000010510670"}, {"nameIdentifier": "7003814580", "nameIdentifierScheme": "Scopus著者ID", "nameIdentifierURI": "https://www.scopus.com/authid/detail.uri?authorId=7003814580"}, {"nameIdentifier": "69", "nameIdentifierScheme": "九工大研究者情報", "nameIdentifierURI": "https://hyokadb02.jimu.kyutech.ac.jp/html/69_ja.html"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2020-12-23"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "nperc156.pdf", "filesize": [{"value": "1.6 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1600000.0, "url": {"label": "nperc156.pdf", "url": "https://kyutech.repo.nii.ac.jp/record/6786/files/nperc156.pdf"}, "version_id": "f2179150-28d1-4cf5-acaa-ea23857d19e8"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "conference paper", "resourceuri": "http://purl.org/coar/resource_type/c_5794"}]}, "item_title": "Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics ", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics "}]}, "item_type_id": "23", "owner": "3", "path": ["20"], "permalink_uri": "http://hdl.handle.net/10228/00007991", "pubdate": {"attribute_name": "公開日", "attribute_value": "2020-12-23"}, "publish_date": "2020-12-23", "publish_status": "0", "recid": "6786", "relation": {}, "relation_version_is_last": true, "title": ["Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics "], "weko_shared_id": 3}
Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics
http://hdl.handle.net/10228/00007991
http://hdl.handle.net/10228/00007991a6aa04c9-7444-403c-959e-6401b6e13772
名前 / ファイル | ライセンス | アクション |
---|---|---|
nperc156.pdf (1.6 MB)
|
|
Item type | 会議発表論文 = Conference Paper(1) | |||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|
公開日 | 2020-12-23 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
資源タイプ | conference paper | |||||||||||
タイトル | ||||||||||||
タイトル | Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Gollapudi, Srikanth
× Gollapudi, Srikanth× 大村, 一郎
WEKO
16176
|
|||||||||||
抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | In this paper, we calculated the failure rate of high power semiconductor devices due to cosmic ray neutrons induced breakdown. This failure is found to occur during reverse bias condition at a voltage, which in practice well below the actual breakdown voltage of the device. Power semiconductor devices operating at airplane altitudes are more susceptible to this failure compare to the terrestrial operation. | |||||||||||
備考 | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | International Conference on Solid State Devices and Materials (SSDM2020), September 27-30, 2020, Toyama, Japan(新型コロナ感染拡大に伴い、現地開催中止) | |||||||||||
書誌情報 |
2020 International Conference on Solid State Devices and Materials (SSDM2020) p. D-9-06, 発行日 2020-09 |
|||||||||||
出版社 | ||||||||||||
出版社 | 応用物理学会 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | The copyright of this paper belongs to The Japan Society of Applied Physics. Copyright (c) 2020 The Japan Society of Applied Physics | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
連携ID | ||||||||||||
8516 | ||||||||||||
著者所属 | ||||||||||||
Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
Kyushu Institute of Technology | ||||||||||||
情報源 | ||||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | http://www.ssdm.jp/2020/index.html | |||||||||||
関連名称 | http://www.ssdm.jp/2020/index.html | |||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Conference Paper |