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Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum well
http://hdl.handle.net/10228/1171
http://hdl.handle.net/10228/1171a23b4c12-e257-4ab6-b9c3-f5e1919dfe8a
名前 / ファイル | ライセンス | アクション |
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1.2980021.pdf (196.1 kB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||
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公開日 | 2008-09-04 | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum well | |||||
言語 | ||||||
言語 | eng | |||||
著者 |
藤原, 賢三
× 藤原, 賢三× Jahn, U.× Grahn, H.T. |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Ambipolar vertical diffusion of carriers generated in an Al0.3Ga0.7As barrier is investigated by cathodoluminescence CL spectroscopy in a system containing a sequence of GaAs-based quantum wells QWs . The intensity distribution of the CL line scan exhibits a single exponential decay for the first QW of the sequence, reflecting a pure diffusion-limited transport. However, the CL line scans of the second, third, and fourth QWs are governed by diffusion only for large separations between the electron beam and the corresponding QW. For smaller distances, the CL intensity distribution is significantly influenced by the carrier capture into the intervening QWs. | |||||
書誌情報 |
Applied Physics Letters 巻 93, 号 10, p. 103504-1-103504-3, 発行日 2008-09-08 |
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出版社 | ||||||
出版者 | American Institute of Physics | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2980021 | |||||
論文ID(NAID) | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | NAID | |||||
関連識別子 | 120002441042 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 425 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
著作権関連情報 | ||||||
権利情報 | Copyright (c) 2008 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics. | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | aluminium compounds | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | carrier lifetime | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | cathodoluminescence | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | diffusion | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | electron traps | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | gallium arsenide | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ⅲ-Ⅴsemiconductors | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | semiconductor quantum wells | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
査読の有無 | ||||||
値 | yes | |||||
研究者情報 | ||||||
https://hyokadb02.jimu.kyutech.ac.jp/html/66_ja.html | ||||||
連携ID | ||||||
42 | ||||||
業績ID | ||||||
8888B808164AD334492574BA000AAC30 | ||||||
資料タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | Journal Article | |||||
著者別名 | ||||||
姓名 | Fujiwara, Kenzo | |||||
言語 | en | |||||
姓名 | 藤原, 賢三 | |||||
言語 | ja | |||||
姓名 | フジワラ, ケンゾウ | |||||
言語 | ja-Kana | |||||
情報源 | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://link.aip.org/link/?APPLAB/90/161117/1 | |||||
関連名称 | http://link.aip.org/link/?APPLAB/90/161117/1 | |||||
情報源 | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.aip.org/ | |||||
関連名称 | http://www.aip.org/ |