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Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
http://hdl.handle.net/10228/00006163
http://hdl.handle.net/10228/00006163f0bb2b1c-e7d1-475c-8ca0-a282f85496de
名前 / ファイル | ライセンス | アクション |
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nperc81.pdf (2.6 MB)
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Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
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公開日 | 2017-04-27 | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル | ||||||||||||
タイトル | Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
著者 |
Chow, T. Paul
× Chow, T. Paul× 大村, 一郎
WEKO
16176
× Higashiwaki, Masataka× Kawarada, Hiroshi× Pala, Vipindas |
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抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences. | |||||||||||
書誌情報 |
IEEE Transactions on Electron Devices 巻 64, 号 3, p. 856-873, 発行日 2017-02-13 |
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出版社 | ||||||||||||
出版者 | IEEE | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | info:doi/10.1109/TED.2017.2653759 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 0018-9383 | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | IEEE | |||||||||||
著作権関連情報 | ||||||||||||
権利情報 | © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
査読の有無 | ||||||||||||
値 | yes | |||||||||||
連携ID | ||||||||||||
6098 | ||||||||||||
資料タイプ | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | Journal Article | |||||||||||
著者所属 | ||||||||||||
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute | ||||||||||||
著者所属 | ||||||||||||
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology | ||||||||||||
著者所属 | ||||||||||||
National Institute of Information and Communications Technology | ||||||||||||
著者所属 | ||||||||||||
School of SCI & ENGR Bldg, Waseda University | ||||||||||||
著者所属 | ||||||||||||
Maxim Integrated | ||||||||||||
情報源 | ||||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | http://ieeexplore.ieee.org/document/7851006/ |