【延期】~~2021年9月13日(月)～17日(金)　リポジトリ停止のお知らせ~~　詳しくはこちら

Kyutacar　九州工業大学学術機関リポジトリ

Kyushu Institute of Technology Academic Repository

Kyutacarは九州工業大学で生産された研究成果を
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Kyutacar is open-access repository of research
by members of the Kyushu Institute of Technology.

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1 - 20 of 37 items

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Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells

Fujiwara Kenzo , Satake A , Schrottke L , Hey R , Grahn H.T
Physica status solidi. B, Basic solid state physics,244(8),2926-2935 (2007-07)

pdf

Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes

Inada T , Satake Akihiro , Fujiwara Kenzo
physica status solidi (c),4(7),2768-2771 (2007-06)

pdf

Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions

Inoue T , Fujiwara Kenzo
Applied Physics Letters,90(16),161109-1-161109-3 (2007-04-17)

pdf

Ultra-low frequency photocurrent self-oscillation in strained InxGa1-xAs quantum well diodes

Tanigawa K , Fujiwara Kenzo , Sano N
Journal of Crystal Growth,301-302,902-905 (2007-04)

pdf

Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes: a comparative study

Hori A , Yasunaga D , Fujiwara Kenzo
Thin Solid Films,515(10),4480-4483 (2007-03)

pdf

Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer

Otsuji N , Fujiwara Kenzo , Sheu J.K.
Journal of Applied Physics,100(11),113105-1-113105-7 (2006-12-05)

pdf

Anti-Stokes photoluminescence between Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells with different x values

Machida S , Takakuma T , Fujiwara kenzo
Physica E: Low-dimensional Systems and Nanostructures,33(1),196-200 (2006-06)

pdf

Carrier capture and escape processes in (In,Ga)N singlequantum-well diode under forward bias condition by photoluminescence spectroscopy

Satake Akihiro , Soejima K , Aizawa H , Fujiwara Kenzo
Physica status solidi. C, Current topics in solid state physics,3(6),2203-2206 (2006-05)

pdf

Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes

Aizawa H , Soejima K , Hori A , Satake Akihiro , Fujiwara Kenzo
Physica status solidi. C, Current topics in solid state physics,3(3),589-593 (2006-02)

pdf

Electric-field dependence of luminescence spectra of (In,Ga)N/GaN LEDs containing quantum wells

Jahn U , Dhar S , Ramsteiner M , Fujiwara Kenzo
physica status solidi (a),201(12),2619-2623 (2004-09)

pdf

Dynamical simulation of phonon-assisted asymmetric transfer of photoexcited carriers in step-graded multiple quantum wells

Machida S , Matsuo M , Fujiwara Kenzo
Physica E: Low-dimensional Systems and Nanostructures,23(1-2),45-49 (2004-06)

pdf

Unusual temperature dependence of electroluminescence intensity in blue InGaN single quantum well diodes

Hori Atsuhiro , Yasunaga Daisuke , Fujiwara Kenzo
Microelectronics Journal,35(4),363-366 (2004-04)

pdf

Field-dependent nonlinear luminescence response of (In,Ga)N/GaN quantum wells

Jahn U , Dhar S , Ramsteiner M , Fujiwara Kenzo
Physical review B. Condensed matter and materials physics,69(11),115323-1-115323-8 (2004-03-19)

pdf

Strong Photoluminescence Emission from an Excited-Subband Exciton State in a GaAs/AlxGa1−xAs Triple Quantum Well with Different Well Thicknesses

Satake Akihiro , Shiraishi N , Takata N , Fujiwara Kenzo , Schrottke L , Grahn H.T.
Physica E: Low-dimensional Systems and Nanostructures,21(2-4),641-645 (2004-03)

pdf

Temperature-dependent electroluminescence anomalies influenced by injection current level in InGaN single-quantum-well diodes

Bakmiwewa P , Hori A , Satake Akihiro , Fujiwara Kenzo
Physica E: Low-dimensional Systems and Nanostructures,21(2-4),636-640 (2004-03)

pdf

Low-energy electron-beam irradiation of GaN-based quantum well structures

Jahn U , Dhar S , Kostial H , Watson I.M , Fujiwara Kenzo
physica status solidi (c),(7),2223-2226 (2003-10)

pdf

Dynamics of unidirectional phonon-assisted transport of photoexcited carriers in step-graded Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple quantum wells

Machida S , Matsuo M , Fujiwara Kenzo , Folkenberg J.R. , Hvam J.M.
Physical review B. Condensed matter and materials physics,67(20),205322-1-205322-7 (2003-05-27)

pdf

Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures

Jahn U , Dhar S , Waltereit P , Kostial H , Watson IM , Fujiwara Kenzo
Institute of Physics conference series,180,337-340 (2003)

pdf

Asymmetric external electric field effects on luminescence intensity of InGaN single-quantum-well light-emitting diode

Satake Akihiro , Hori A , Takahashi Y , Yasunaga D , Fujiwara Kenzo
Journal of Physics: Conference Series,171, (2003)

pdf

Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes

Hori A , Yasunaga D , Satake Akihiro , Fujiwara Kenzo
physica status solidi (a),192(1),44-48 (2002-06)

pdf

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Kyutacar 九州工業大学学術機関リポジトリ

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