2026-03-14T17:29:57Z https://kyutech.repo.nii.ac.jp/oai

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Dynamic Vgs-Id monitoring system for junction temperature estimation for MOS gate power semiconductors Bayarsaikhan, Yandagkhuu 10510670 Omura, Ichiro 大村, 一郎 オオムラ, イチロウ Copyright (c) 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. 549 MOSFET Temperature measurement Temperature monitoring Threshold voltage Rogowski coil PCB current sensor Condition monitoring Condition monitoring of power devices during operation is gaining importance as demand for high-reliability increases. The junction temperature of a power semiconductor device is a critical indicator of reliability. Therefore, we developed a new method for estimating the junction temperature of Si MOSFET based on the dynamic threshold voltage. The proposed method uses a tiny PCB sensor for detecting source current and capturing dynamic gate-source voltage at different current levels. The measurement circuit was successfully developed and evaluated by a double pulse test. The measured output voltage was digitized by 16-bit ADC included in the microcontroller to achieve the complete monitoring system. The temperature sensitivity of the Si MOSFET was -2.2 mV/°C and it was independent of the high side device temperature. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), 22-25 May 2022, Vancouver, Canada IEEE 2022-07-06 eng journal article AM http://hdl.handle.net/10228/00009031 https://kyutech.repo.nii.ac.jp/records/7828 https://doi.org/10.1109/ISPSD49238.2022.9813601 978-1-6654-2201-7 1946-0201 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 193 196 https://kyutech.repo.nii.ac.jp/record/7828/files/nperc208.pdf application/pdf 1.8 MB 2022-12-12