@article{oai:kyutech.repo.nii.ac.jp:00001065,
 author = {Kohiki, Shigemi and 古曵, 重美 and Nishitani, Mikihiko and Wada, Takahiro},
 issue = {4},
 journal = {Journal of Applied Physics},
 month = {Feb},
 note = {Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive zinc oxide thin films deposited by rf magnetron sputtering at room temperature to reduce the effect ot oxygen vacancies. With the doping by 1 X 10(17) atoms/cm2 gallium the conductivity is 1.0 X 10((3)/OMEGA cm for as-implanted film and it increases up to 3.7 X 10(3)/OMEGA cm, the highest conductivity reported for zinc oxide films. with raising the annealing temperature in either a nitrogen or oxygen atmosphere. The conductivity of aluminum-doped films is slightly lower than those of gallium-doped films. Among the elements gallium, aluminum, and boron, gallium is the most effective in enhancing the conductivity and boron is the least. The order of the effectiveness is explained by the electronegativity of the dopants.},
 pages = {2069--2072},
 title = {Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms},
 volume = {75},
 year = {1994},
 yomi = {コヒキ, シゲミ}
}