{"created":"2023-05-15T11:55:57.571583+00:00","id":1065,"links":{},"metadata":{"_buckets":{"deposit":"3b6171c2-356f-4eb7-8c76-77a2e62c7bca"},"_deposit":{"created_by":3,"id":"1065","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1065"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001065","sets":["8:24"]},"author_link":["4912","20416","4911"],"control_number":"1065","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-02-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"2072","bibliographicPageStart":"2069","bibliographicVolumeNumber":"75","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive zinc oxide thin films deposited by rf magnetron sputtering at room temperature to reduce the effect ot oxygen vacancies. With the doping by 1 X 10(17) atoms/cm2 gallium the conductivity is 1.0 X 10((3)/OMEGA cm for as-implanted film and it increases up to 3.7 X 10(3)/OMEGA cm, the highest conductivity reported for zinc oxide films. with raising the annealing temperature in either a nitrogen or oxygen atmosphere. The conductivity of aluminum-doped films is slightly lower than those of gallium-doped films. Among the elements gallium, aluminum, and boron, gallium is the most effective in enhancing the conductivity and boron is the least. The order of the effectiveness is explained by the electronegativity of the dopants.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Kohiki","familyNameLang":"en"},{"familyName":"古曵","familyNameLang":"ja"},{"familyName":"コヒキ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Shigemi","givenNameLang":"en"},{"givenName":"重美","givenNameLang":"ja"},{"givenName":"シゲミ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"20416","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"00261248","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000000261248"},{"nameIdentifier":"35414509400","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=35414509400"}],"names":[{"name":"Kohiki, Shigemi","nameLang":"en"},{"name":"古曵, 重美","nameLang":"ja"},{"name":"コヒキ, シゲミ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.356310","subitem_relation_type_select":"DOI"}}]},"item_21_relation_66":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"120002441237","subitem_relation_type_select":"NAID"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 1994 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570, Japan"},{"subitem_text_value":"Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570, Japan"},{"subitem_text_value":"Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570, Japan"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"E7FA3F273B5A445A492575610020166E"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Kohiki, Shigemi","creatorNameLang":"en"},{"creatorName":"古曵, 重美","creatorNameLang":"ja"},{"creatorName":"コヒキ, シゲミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Nishitani, Mikihiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wada, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-02-20"}],"displaytype":"detail","filename":"kohiki_10.pdf","filesize":[{"value":"2.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kohiki_10.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1065/files/kohiki_10.pdf"},"version_id":"5230bb8a-896f-4827-b695-c2bc3ac8205e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"zinc oxides","subitem_subject_scheme":"Other"},{"subitem_subject":"thin films","subitem_subject_scheme":"Other"},{"subitem_subject":"electric conductivity","subitem_subject_scheme":"Other"},{"subitem_subject":"ion implantation","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium ions","subitem_subject_scheme":"Other"},{"subitem_subject":"boron ions","subitem_subject_scheme":"Other"},{"subitem_subject":"aluminium ions","subitem_subject_scheme":"Other"},{"subitem_subject":"doped materials","subitem_subject_scheme":"Other"},{"subitem_subject":"enhancement","subitem_subject_scheme":"Other"},{"subitem_subject":"sputtered materials","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-02-20"},"publish_date":"2009-02-20","publish_status":"0","recid":"1065","relation_version_is_last":true,"title":["Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-10-25T09:55:37.496401+00:00"}