@article{oai:kyutech.repo.nii.ac.jp:00001066,
 author = {Kohiki, Shigemi and 古曵, 重美 and Nishitani, M and Wada, T and Hirao, T},
 issue = {21},
 journal = {Applied Physics Letters},
 month = {May},
 note = {Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1 X 10(17) atoms cm-2, the conductivity after annealing at 200-degrees-C in an N2 atmosphere at 1 atm rose from the initial 1 X 10(-7) OMEGA-1 cm-1 to 5.5 X 10(2) OMEGA-1 cm-1.},
 pages = {2876--2878},
 title = {Enhanced Conductivity of Zinc-oxide thin-films by Ion-Implantation of Hydrogen-atoms},
 volume = {64},
 year = {1994},
 yomi = {コヒキ, シゲミ}
}