@article{oai:kyutech.repo.nii.ac.jp:00001067,
 author = {Kohiki, Shigemi and 古曵, 重美 and Nishitani, M and Negami, T and Wada, T},
 issue = {14},
 journal = {Applied Physics Letters},
 month = {Apr},
 note = {Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.},
 pages = {1656--1657},
 title = {Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9},
 volume = {62},
 year = {1993},
 yomi = {コヒキ, シゲミ}
}