{"created":"2023-05-15T11:55:57.692702+00:00","id":1067,"links":{},"metadata":{"_buckets":{"deposit":"d97a1997-f078-4ec9-aaa3-c57c3c3f6bdc"},"_deposit":{"created_by":3,"id":"1067","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1067"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001067","sets":["8:24"]},"author_link":["20416","4920","4921","4922"],"control_number":"1067","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1570854177629091328","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1993-04-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"14","bibliographicPageEnd":"1657","bibliographicPageStart":"1656","bibliographicVolumeNumber":"62","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.108617","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright © 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"9EE5D07ED912CA85492575610020196A"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Kohiki, Shigemi","creatorNameLang":"en"},{"creatorName":"古曵, 重美","creatorNameLang":"ja"},{"creatorName":"コヒキ, シゲミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Nishitani, M","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Negami, T","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wada, T","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-02-20"}],"displaytype":"detail","filename":"kohiki_12.pdf","filesize":[{"value":"47.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kohiki_12.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1067/files/kohiki_12.pdf"},"version_id":"938ad1a7-615c-470b-bc4b-90f615eaa0a3"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"copper selenides","subitem_subject_scheme":"Other"},{"subitem_subject":"indium selenides","subitem_subject_scheme":"Other"},{"subitem_subject":"ternay compouds","subitem_subject_scheme":"Other"},{"subitem_subject":"p&minus","subitem_subject_scheme":"Other"},{"subitem_subject":"n junctions","subitem_subject_scheme":"Other"},{"subitem_subject":"ion implantation","subitem_subject_scheme":"Other"},{"subitem_subject":"phosphorus additions","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal doping","subitem_subject_scheme":"Other"},{"subitem_subject":"iv characteristic","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-02-20"},"publish_date":"2009-02-20","publish_status":"0","recid":"1067","relation_version_is_last":true,"title":["Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-01-18T04:33:15.113702+00:00"}