@article{oai:kyutech.repo.nii.ac.jp:00001073,
 author = {Kubo, M and Sasai, Y and Ogura, M and Kohiki, Shigemi and 古曵, 重美},
 issue = {1},
 journal = {Journal of Applied Physics},
 month = {Jan},
 note = {The interfacial reaction between thermally oxidized In1−xGaxAsyP1−y and an In1−xGaxAsyP1−y epilayer was studied using Raman and x-ray photoelectron spectroscopy (XPS) analyses. In Raman spectra, it was found that the appearance of the phonon modes, i.e., the first-order longitudinal (LO) and transverse-optical (TO) modes for crystalline arsenic, was due to the In1−xGaxAsyP1−y -oxide interfacial reaction. The XPS analyses showed that this reaction corresponded to the GaAs-oxide interfacial reaction, i.e., As2O3+2GaAsGa2O3+4As. Furthermore, the reaction depends on the composition y of In1−xGaxAsyP1−y, which may be due to the enhancement in the initial transient reaction by thermal damage of In1−xGaxAsyP1−y occurring at the interface. Journal of Applied Physics is copyrighted by The American Institute of Physics.},
 pages = {184--187},
 title = {Interfacial solid‐state reaction at thermally oxidized In1−xGaxAsyP1−y alloys},
 volume = {64},
 year = {1988},
 yomi = {コヒキ, シゲミ}
}