{"created":"2023-05-15T11:55:57.945805+00:00","id":1073,"links":{},"metadata":{"_buckets":{"deposit":"8dcf12d9-c693-45c3-8d23-d42999d8cb02"},"_deposit":{"created_by":3,"id":"1073","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1073"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001073","sets":["8:24"]},"author_link":["4964","4965","4966","20416"],"control_number":"1073","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1050564288863269376","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1988-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"187","bibliographicPageStart":"184","bibliographicVolumeNumber":"64","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The interfacial reaction between thermally oxidized In1−xGaxAsyP1−y and an In1−xGaxAsyP1−y epilayer was studied using Raman and x-ray photoelectron spectroscopy (XPS) analyses. In Raman spectra, it was found that the appearance of the phonon modes, i.e., the first-order longitudinal (LO) and transverse-optical (TO) modes for crystalline arsenic, was due to the In1−xGaxAsyP1−y -oxide interfacial reaction. The XPS analyses showed that this reaction corresponded to the GaAs-oxide interfacial reaction, i.e., As2O3+2GaAsGa2O3+4As. Furthermore, the reaction depends on the composition y of In1−xGaxAsyP1−y, which may be due to the enhancement in the initial transient reaction by thermal damage of In1−xGaxAsyP1−y occurring at the interface. Journal of Applied Physics is copyrighted by The American Institute of Physics.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.341460","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright © 1988 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"},{"subitem_source_identifier":"1089-7550","subitem_source_identifier_type":"EISSN"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"809B5F4E699E5DC449257561002020AF"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kubo, M","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sasai, Y","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogura, M","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Kohiki, Shigemi","creatorNameLang":"en"},{"creatorName":"古曵, 重美","creatorNameLang":"ja"},{"creatorName":"コヒキ, シゲミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-02-20"}],"displaytype":"detail","filename":"kohiki_23.pdf","filesize":[{"value":"95.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kohiki_23.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1073/files/kohiki_23.pdf"},"version_id":"6dd6093a-a716-4d16-aa44-189ca35c2cb4"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"surface Reactions","subitem_subject_scheme":"Other"},{"subitem_subject":"interface phenomena","subitem_subject_scheme":"Other"},{"subitem_subject":"indium arsenides","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium arsenides","subitem_subject_scheme":"Other"},{"subitem_subject":"indium phosphides","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium phosphides","subitem_subject_scheme":"Other"},{"subitem_subject":"phonon spectra","subitem_subject_scheme":"Other"},{"subitem_subject":"raman spectra","subitem_subject_scheme":"Other"},{"subitem_subject":"optical phonons","subitem_subject_scheme":"Other"},{"subitem_subject":"optical modes","subitem_subject_scheme":"Other"},{"subitem_subject":"x radiation","subitem_subject_scheme":"Other"},{"subitem_subject":"photoelectron spectroscopy","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Interfacial solid‐state reaction at thermally oxidized In1−xGaxAsyP1−y alloys","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Interfacial solid‐state reaction at thermally oxidized In1−xGaxAsyP1−y alloys","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-02-20"},"publish_date":"2009-02-20","publish_status":"0","recid":"1073","relation_version_is_last":true,"title":["Interfacial solid‐state reaction at thermally oxidized In1−xGaxAsyP1−y alloys"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-04-24T08:01:49.346978+00:00"}