{"created":"2023-05-15T11:56:01.340724+00:00","id":1140,"links":{},"metadata":{"_buckets":{"deposit":"14b29dbe-af93-4f27-a605-93805eac91ac"},"_deposit":{"created_by":3,"id":"1140","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1140"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001140","sets":["8:24"]},"author_link":["5360","5359","1138"],"control_number":"1140","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-04-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"15","bibliographicPageEnd":"10235","bibliographicPageStart":"10232","bibliographicVolumeNumber":"51","bibliographic_titles":[{"bibliographic_title":"Physical review B. Condensed matter"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have directly observed the localization dynamics of excitons within growth islands of a GaAs/Al0.17Ga0.83As single quantum well by time-resolved photoluminescence (PL). The PL emission of each growth island is split into two peaks that have an energy separation of 3 meV. These peaks are attributed to the emission of free and localized excitons within the islands. Upon pulsed excitation, the high-energy free-exciton PL line dominates the initial emission, while for longer times (350 ps) the bound-exciton PL peak emerges. This observation directly reflects the localization of free excitons within the growth islands.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal 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© 1995 American Physical Society"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00362255","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0163-1829","subitem_source_identifier_type":"PISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Paul-Drude-Institut fiir Festkorperelektronik, Hausvogteiplatz 5-7, D-l0117 Berlin, Germany"},{"subitem_text_value":"Paul-Drude-Institut fiir Festkorperelektronik, Hausvogteiplatz 5-7, D-l0117 Berlin, Germany"},{"subitem_text_value":"Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"3DBA37181144DDB74925756800206D69"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Klann, R.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Grahn, H.T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, 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GaAs/Al0.17Ga0.83As single quantum wells"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-10-25T08:28:03.247181+00:00"}