{"created":"2023-05-15T11:56:01.472696+00:00","id":1143,"links":{},"metadata":{"_buckets":{"deposit":"65f88451-3c83-4af7-a3e7-5fb72c086bc6"},"_deposit":{"created_by":3,"id":"1143","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1143"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001143","sets":["8:24"]},"author_link":["5379","5378","5377","1138"],"control_number":"1143","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1989-07-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"1101","bibliographicPageStart":"1096","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"Physical review B. Condensed matter"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Perpendicular transport of photoexcited carriers, which sink into an intentionally enlarged quantum well, is investigated in a set of GaAs/AlAs short-period superlattices with systematically varied AlAs barrier thicknesses as a function of the lattice temperature between 4.2 and 200 K. Excitation-power dependence of the luminescence observed at low temperatures indicates that the ambipolar transport is operative at carrier densities in excess of 1015–1017 cm−3. We find that tunneling-assisted hopping conduction prevails at low temperatures via localized states and that the tunneling probability is correlated with the calculated heavy-hole miniband width. We also find a crossover from the hopping conduction to the Bloch-type transport at higher temperatures, which critically depends on the barrier thickness, as a result of thermal activation of carriers to the extended miniband states.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Fujiwara","familyNameLang":"en"},{"familyName":"藤原","familyNameLang":"ja"},{"familyName":"フジワラ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Kenzo","givenNameLang":"en"},{"givenName":"賢三","givenNameLang":"ja"},{"givenName":"ケンゾウ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"1138","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90243980","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000090243980"},{"nameIdentifier":"7403468236","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7403468236"}],"names":[{"name":"Fujiwara, Kenzo","nameLang":"en"},{"name":"藤原, 賢三","nameLang":"ja"},{"name":"フジワラ, ケンゾウ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"Published for the American Physical Society by the American Institute of Physics"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1103/PhysRevB.40.1096","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.aps.org/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.aps.org/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1103/PhysRevB.40.1096"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1103/PhysRevB.40.1096","subitem_relation_type_select":"DOI"}}]},"item_21_relation_66":{"attribute_name":"NAID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"120002441318","subitem_relation_type_select":"NAID"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright © 1989 American Physical Society"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00362255","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0163-1829","subitem_source_identifier_type":"PISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan"},{"subitem_text_value":"Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan"},{"subitem_text_value":"Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan"},{"subitem_text_value":"Department of Applied Physics, Faculty of Engineering, Nagoya University, Nagoya 464-01, Japan"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"0D1ADBCBD2747CFF4925756800206FF8"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Tsukada, N","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakayama, T","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, A","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-02-25"}],"displaytype":"detail","filename":"fujiwara_11.pdf","filesize":[{"value":"925.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"fujiwara_11.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1143/files/fujiwara_11.pdf"},"version_id":"cf2145f5-051d-48cc-85f9-74a7b6f1482c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-02-25"},"publish_date":"2009-02-25","publish_status":"0","recid":"1143","relation_version_is_last":true,"title":["Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-10-25T08:28:15.823254+00:00"}