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Temperature dependence of the exciton population in emission spectra of GaAs single quantum wells with enlarged monolayer-flat growth islands
http://hdl.handle.net/10228/1578
http://hdl.handle.net/10228/15782593ca9a-36f6-43b3-844c-1d130adc85d6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
fujiwara_12.pdf (757.4 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2009-02-25 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Temperature dependence of the exciton population in emission spectra of GaAs single quantum wells with enlarged monolayer-flat growth islands | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
藤原, 賢三
× 藤原, 賢三× Kanamoto, K× Tsukada, N |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The temperature dependence of the exciton population is investigated in GaAs single quantum wells (SQW) 19–22 monolayers wide with enlarged monolayer-flat growth islands grown by growth interrupted molecular-beam epitaxy. A comparative study with in-plane photocurrent spectroscopy shows that free-excitonic recombinations within the growth islands dominate the emission spectra even at room temperature. Detailed studies of the lowest heavy-hole exciton spectral characteristics as a function of the lattice temperature allow us to directly find the in-plane exciton localization and exciton detrapping processes between the SQW growth islands. A simple model analysis was made to explain observed temperature-dependent variations of the population at the exciton bands corresponding to the four different SQW growth islands, assuming Gaussian line-shape functions. | |||||
| 書誌情報 |
Physical review B. Condensed matter 巻 40, 号 14, p. 9698-9702, 発行日 1989-11-15 |
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| 出版社 | ||||||
| 出版者 | Published for the American Physical Society by the American Institute of Physics | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | info:doi/10.1103/PhysRevB.40.9698 | |||||
| NAID | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | NAID | |||||
| 関連識別子 | 120002441319 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00362255 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0163-1829 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 1989 American Physical Society | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 業績ID | ||||||
| 値 | 31985170DE56FA2249257568002070E9 | |||||
| 情報源 | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.aps.org/ | |||||
| 関連名称 | http://www.aps.org/ | |||||
| 情報源 | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1103/PhysRevB.40.9698 | |||||
| 関連名称 | https://doi.org/10.1103/PhysRevB.40.9698 | |||||
