@article{oai:kyutech.repo.nii.ac.jp:00000116,
 author = {Satake, Akihiro and 佐竹, 昭泰 and Tanigawa, K. and Kimura, T. and Fujiwara, Kenzo and 藤原, 賢三 and Sano, N.},
 issue = {16},
 journal = {Applied Physics Letters},
 month = {Oct},
 note = {We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of ~0.1  Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1–xAs quantum-well regions.},
 pages = {3483--3485},
 title = {Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes},
 volume = {85},
 year = {2004},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}