{"created":"2023-05-15T11:55:15.969932+00:00","id":116,"links":{},"metadata":{"_buckets":{"deposit":"00dadffa-bdc7-48c4-aa31-29cc400cab22"},"_deposit":{"created_by":3,"id":"116","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"116"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000116","sets":["8:9"]},"author_link":["252","552","553","1138","555"],"control_number":"116","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1573950402372970752","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-10-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"16","bibliographicPageEnd":"3485","bibliographicPageStart":"3483","bibliographicVolumeNumber":"85","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of ~0.1  Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1–xAs quantum-well regions.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1806268","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright © 2004 American Institute of Physics"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"425","subitem_subject_scheme":"NDC"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Satake, Akihiro","creatorNameLang":"en"},{"creatorName":"佐竹, 昭泰","creatorNameLang":"ja"},{"creatorName":"サタケ, アキヒロ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Tanigawa, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kimura, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Sano, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-19"}],"displaytype":"detail","filename":"1.1806268.pdf","filesize":[{"value":"58.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1.1806268.pdf","url":"https://kyutech.repo.nii.ac.jp/record/116/files/1.1806268.pdf"},"version_id":"cdff4e53-a4ad-42b0-ba2b-e9fcfcdcd662"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"indium compounds","subitem_subject_scheme":"Other"},{"subitem_subject":"aluminium compounds","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium arsenide","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor quantum wells","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum well devices","subitem_subject_scheme":"Other"},{"subitem_subject":"p-i-n diodes","subitem_subject_scheme":"Other"},{"subitem_subject":"photoconductivity","subitem_subject_scheme":"Other"},{"subitem_subject":"photoemission","subitem_subject_scheme":"Other"},{"subitem_subject":"electron traps","subitem_subject_scheme":"Other"},{"subitem_subject":"hole traps","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-11-19"},"publish_date":"2007-11-19","publish_status":"0","recid":"116","relation_version_is_last":true,"title":["Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-04-02T08:38:27.066697+00:00"}