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Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy
http://hdl.handle.net/10228/1619
http://hdl.handle.net/10228/1619c9ebef50-6b0f-4c70-95e4-65155262e2ff
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
fujiwara_16.pdf (1.2 MB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2009-02-26 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy | |||||
| 言語 | en | |||||
| その他のタイトル | ||||||
| その他のタイトル | Effects of substrate preparation conditions on GaAs oval defects grown by molecular-beam epitaxy | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
藤原, 賢三
× 藤原, 賢三× Nishikawa, Y× Tokuda, Y× Nakayama, T |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without macroscopic core particulates can be ascribed to surface microscopic contaminations. Most of the other remaining larger (>10 μm) oval defects with core particulates observed on 1‐μm‐thick GaAs MBE layers are attributed to surface macroscopic contaminations. The total density is reduced to 300 cm−2 without significantly modifying the growth cell parameters. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 48, 号 11, p. 701-703, 発行日 1986-03-17 |
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| 出版社 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.96748 | |||||
| CRID | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://cir.nii.ac.jp/crid/1571698602559074176 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | EISSN | |||||
| 収録物識別子 | 1077-3118 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright © 1986 American Institute of Physics. This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 業績ID | ||||||
| 値 | CFBBA97277E54DFC49257569002BEBA5 | |||||
