{"created":"2023-05-15T11:56:03.490256+00:00","id":1185,"links":{},"metadata":{"_buckets":{"deposit":"a63a053f-4b8f-4728-a13c-51990897a1be"},"_deposit":{"created_by":3,"id":"1185","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1185"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001185","sets":["8:24"]},"author_link":["1138","5584","5585","5586","5587"],"control_number":"1185","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1571417127582365824","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1986-11-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"18","bibliographicPageEnd":"1195","bibliographicPageStart":"1193","bibliographicVolumeNumber":"49","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1 nm GaAs single quantum well heterostructures (SQWH’s) confined by GaAs/AlAs short‐period superlattices (SPS’s) or ternary AlGaAs alloys with similar Al content, prepared by molecular beam epitaxy. The SQW PL intensity exhibits a single exponential decay with a time constant of 1.6 ns for SQWH’s confined by SPS’s and 0.3 ns for SQWH’s confined by AlGaAs alloys at 77 K. From comparison of the decay rates in both types of the sample, it is found that the radiative recombination efficiency is improved by a factor of about 6 in SPS confined SQWH’s. This higher efficiency is attributed to the improved heterointerfaces in addition to the enhanced radiative recombination rate due to the increased overlap of electron and hole wave functions in the narrow SQW.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.97411","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright © 1986 American Institute of Physics. This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"F0018D741D44674F49257569002BECE7"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Nakamura, A","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tokuda, Y","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakayama, T","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirai, M","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-02-26"}],"displaytype":"detail","filename":"fujiwara_17.pdf","filesize":[{"value":"202.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"fujiwara_17.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1185/files/fujiwara_17.pdf"},"version_id":"ab5c7810-94b3-4ead-8e55-400bfd792fd3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-02-26"},"publish_date":"2009-02-26","publish_status":"0","recid":"1185","relation_version_is_last":true,"title":["Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-01-18T02:44:52.326247+00:00"}