{"created":"2023-05-15T11:55:16.134345+00:00","id":120,"links":{},"metadata":{"_buckets":{"deposit":"f1058cb6-8128-4f8d-9e8f-7c550e7ed98e"},"_deposit":{"created_by":3,"id":"120","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"120"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000120","sets":["17:18"]},"author_link":["574"],"item_22_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-04","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{}]}]},"item_22_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"(はしがき) 本報告書は平成17年度～平成18年度に行った科学研究費補助金による基盤研究(C)「高密度ラジカル処理法による基板表面の超親水化と高品質絶縁膜の形成」（課題番号１７５６０００９）を取りまとめたものである。高品質な薄膜堆積には、薄膜堆積初期の島状成長やインキュベーション層の形成を抑制する必要がある。そのためには、基板表面の濡れ性を向上させる表面改質処理（親水化処理）が必要である。本研究では、薄膜成長において、インキュベーション層を介在することなく界面から均質な膜の形成が可能な基板表面の濡れ性が制御可能な新規の表面改質とその機構の探求、および、表面改質基板とCVD 膜の堆積過程の関係を解明し、良質な薄膜を堆積するための指針を得ることを目的としている。本報告書では本研究によって得られた「アンモニア分解種による表面窒化過程の検討」と「有機液体原料による高品質シリコン炭窒化膜の形成」について述べる。","subitem_description_type":"Abstract"}]},"item_22_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"平成17年度～平成18年度科学研究費補助金（基盤研究（C））研究成果報告書","subitem_description_type":"Other"}]},"item_22_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"九州工業大学"}]},"item_22_select_60":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"no"}]},"item_22_text_37":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"九州工業大学工学部"}]},"item_22_text_58":{"attribute_name":"科研課題番号","attribute_value_mlt":[{"subitem_text_value":"17560009"}]},"item_22_text_62":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_text_value":"別刷論文（ｐ.31以降）削除"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Izumi, Akira","creatorNameLang":"en"},{"creatorName":"和泉, 亮","creatorNameLang":"ja"},{"creatorName":"イズミ, アキラ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-20"}],"displaytype":"detail","filename":"17560009seika.pdf","filesize":[{"value":"471.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"17560009seika.pdf","url":"https://kyutech.repo.nii.ac.jp/record/120/files/17560009seika.pdf"},"version_id":"3c22e185-63ee-4b9d-a75f-0f31f8480515"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiCN","subitem_subject_scheme":"Other"},{"subitem_subject":"HMDS","subitem_subject_scheme":"Other"},{"subitem_subject":"HWCVD","subitem_subject_scheme":"Other"},{"subitem_subject":"Nitridation","subitem_subject_scheme":"Other"},{"subitem_subject":"Reduction","subitem_subject_scheme":"Other"},{"subitem_subject":"Cleaning","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"高密度ラジカル処理法による基板表面の超親水化と高品質絶縁膜の形成","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"高密度ラジカル処理法による基板表面の超親水化と高品質絶縁膜の形成"}]},"item_type_id":"22","owner":"3","path":["18"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-11-20"},"publish_date":"2007-11-20","publish_status":"0","recid":"120","relation_version_is_last":true,"title":["高密度ラジカル処理法による基板表面の超親水化と高品質絶縁膜の形成"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T07:04:22.844315+00:00"}