@article{oai:kyutech.repo.nii.ac.jp:00000126,
 author = {Itoh, T and Kashirajima, S and Naitoh, Masamichi and 内藤, 正路 and Nishigaki, Satoshi and Shoji, F},
 issue = {1-4},
 journal = {Applied Surface Science},
 month = {May},
 note = {We report the dynamic process of Bi line structure (BLS) formation and the reactiondynamics of the BLS with foreign atoms on Si(100) surfaces by scanning tunnelingmicroscopy (STM). The BLS consisting of Bi dimers is formed on the Si(100) surfaceafter bismuth deposition at 400~500oC. From the consecutive STM images taken after Bideposition on the surface, we found that BLSs are formed by expelling atoms that composethe Si terrace at the front of the BLS growth. When Ag atoms were deposited on theSi(100) surface with the BLSs, we found that Ag atoms are preferentially adsorbed on the Siterraces compared with BLSs.},
 pages = {161--165},
 title = {STM observation of Bi line structures on the Si(1 0 0) surface with Ag deposition},
 volume = {244},
 year = {2005},
 yomi = {ナイトウ, マサミチ}
}