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Fabrication and characterization of Bi0.4Te3.0Sb1.6 thin films by flash evaporation method
http://hdl.handle.net/10228/385
http://hdl.handle.net/10228/3854c07b7a8-6204-4580-ba37-92caf3ab8e73
| 名前 / ファイル | ライセンス | アクション |
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Text_j.jallcom.2006.09.136.pdf (168.6 kB)
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Figure_j.jallcom.2006.09.136.pdf (332.2 kB)
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| Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2007-11-22 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Fabrication and characterization of Bi0.4Te3.0Sb1.6 thin films by flash evaporation method | |||||||||||||
| 言語 | en | |||||||||||||
| その他のタイトル | ||||||||||||||
| その他のタイトル | Fabrication and characterization of (Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films by flash evaporated deposition | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Takashiri, Ｍ.
× Takashiri, Ｍ.× Shirakawa, Ｔ.× 宮崎, 康次
WEKO
679
× 塚本, 寛 |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Bi0.4Te3.0Sb1.6 thin films on glass substrates are fabricated by a flash evaporation method. In order to enhance the transport properties of the thin films, annealing in argon ambient at atmospheric pressure is carried out for 1 h in the temperature range from 200 to 400 °C. The structure of the thin films, in terms of homogeneous composition and crystallinity, is investigated by energy dispersive X-ray spectroscopy and X-ray diffraction, respectively. The microstructure of the thin films is examined using scanning electron microscopy. We confirm that as-deposited Bi0.4Te3.0Sb1.6 thin films have a mostly homogeneous structure except for a few extra stuck particles. At higher annealing temperatures, the crystallinity of the thin films is improved and the size of crystal grains increases to the same size as the film thickness. However, excessive high annealing temperatures cause porous thin films due to the evaporation of tellurium. The transport properties of the thin films, in terms of the electrical resistivity, the Seebeck coefficient and the thermoelectric power factor are determined at room temperature. By optimizing the annealing conditions, it is possible to obtain a high-performance thin film with a thermoelectric power factor of 12.2 μW cm−1 K−2. We consider that the performance of the thin films is enhanced for optimized annealing because of reductions in the importance of grain boundary scattering. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : Journal of Alloys and Compounds 巻 441, 号 1-2, p. 246-250, 発行日 2007-08-30 |
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| 出版社 | ||||||||||||||
| 出版者 | Elsevier | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.jallcom.2006.09.136 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0925-8388 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1873-4669 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2006 Elsevier B.V. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Thin film | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Flash evaporation | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Thermoelectric | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Annealing | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
