@article{oai:kyutech.repo.nii.ac.jp:00000148,
 author = {Jahn, U and Dhar, S and Kostial, H and Watson, I.M and Fujiwara, Kenzo and 藤原, 賢三},
 issue = {7},
 journal = {Physica status solidi. C, Conferences and critical reviews},
 month = {Oct},
 note = {The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD depend significantly onlow-energy electron-beam irradiation (LEEBI), e. g., during cathodoluminescence (CL) investigations,when a certain exposure dose is exceeded. For unintentionally doped structures, we observe a LEEBIinducedactivation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantumefficiency and optical transition energy increases significantly by LEEBI. The electric field distributionin a p-n structure is changed towards the flat band condition during LEEBI indicating an electron-beaminducedpassivation of acceptors in the p-type layer., 5th International Conference on Nitride Semiconductors (ICNS‐5), 25–30 May, 2003, Nara, Japan},
 pages = {2223--2226},
 title = {Low-energy electron-beam irradiation of GaN-based quantum well structures},
 volume = {0},
 year = {2003},
 yomi = {フジワラ, ケンゾウ}
}