{"created":"2023-05-15T11:55:17.300639+00:00","id":148,"links":{},"metadata":{"_buckets":{"deposit":"e4756ba3-9edd-4282-973d-4e2265a27df3"},"_deposit":{"created_by":3,"id":"148","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"148"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000148","sets":["8:24"]},"author_link":["718","719","720","721","1138"],"control_number":"148","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"2226","bibliographicPageStart":"2223","bibliographicVolumeNumber":"0","bibliographic_titles":[{"bibliographic_title":"Physica status solidi. C, Conferences and critical reviews","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD depend significantly onlow-energy electron-beam irradiation (LEEBI), e. g., during cathodoluminescence (CL) investigations,when a certain exposure dose is exceeded. For unintentionally doped structures, we observe a LEEBIinducedactivation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantumefficiency and optical transition energy increases significantly by LEEBI. The electric field distributionin a p-n structure is changed towards the flat band condition during LEEBI indicating an electron-beaminducedpassivation of acceptors in the p-type layer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_description_5":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_description":"5th International Conference on Nitride Semiconductors (ICNS‐5), 25–30 May, 2003, Nara, Japan","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"Wiley"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/pssc.200303290","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2003 WILEY-VCH Verlag GmbH & Co., physica status solidi (C),Issue 7,p2223-2226"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11896717","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1610-1634","subitem_source_identifier_type":"PISSN"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Jahn, U","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Dhar, S","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kostial, H","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Watson, I.M","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-22"}],"displaytype":"detail","filename":"MsICNS-5(Jahn).pdf","filesize":[{"value":"111.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MsICNS-5(Jahn).pdf","url":"https://kyutech.repo.nii.ac.jp/record/148/files/MsICNS-5(Jahn).pdf"},"version_id":"03bd395f-b632-451a-beba-a3ed0a9670d0"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"78.60.Hk","subitem_subject_scheme":"Other"},{"subitem_subject":"78.66.Fd","subitem_subject_scheme":"Other"},{"subitem_subject":"78.67.De","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low-energy electron-beam irradiation of GaN-based quantum well structures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low-energy electron-beam irradiation of GaN-based quantum well structures","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-11-22"},"publish_date":"2007-11-22","publish_status":"0","recid":"148","relation_version_is_last":true,"title":["Low-energy electron-beam irradiation of GaN-based quantum well structures"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-11-15T04:29:49.740344+00:00"}