@article{oai:kyutech.repo.nii.ac.jp:00000149,
 author = {Hori, A and Yasunaga, D and Satake, Akihiro and 佐竹, 昭泰 and Fujiwara, Kenzo and 藤原, 賢三},
 issue = {1},
 journal = {Physica status solidi. A, Applied research},
 month = {Jun},
 note = {Temperature and injection current dependence of electroluminescence (EL) spectral intensity of thesuper-bright InGaN single quantum well (SQW) light emitting diodes (LED’s) has been carefullyinvestigated over a wide temperature range (T = 15-300 K) and as a function of injection current level(0.1-10 mA). It is found that, when T is decreased slightly to 140 K, the EL intensity efficiently increasesdue to reduced non-raiative recombination processes. However, further decrease of T below 100 K, itdrastically decreases due to the reduced carrier capturing by the localized recombination centers andshows a clear trend of saturation, accompanying decreases of the EL differential efficiency. Theseresults are analyzed within a context of rate equation model assuming a finite number of radiativerecombination centers.},
 pages = {44--48},
 title = {Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes},
 volume = {192},
 year = {2002},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}