{"created":"2023-05-15T11:55:17.344648+00:00","id":149,"links":{},"metadata":{"_buckets":{"deposit":"18182847-1da3-403d-a94a-ae2df01be39a"},"_deposit":{"created_by":3,"id":"149","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"149"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000149","sets":["8:24"]},"author_link":["724","725","252","1138"],"control_number":"149","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"48","bibliographicPageStart":"44","bibliographicVolumeNumber":"192","bibliographic_titles":[{"bibliographic_title":"Physica status solidi. A, Applied research","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Temperature and injection current dependence of electroluminescence (EL) spectral intensity of thesuper-bright InGaN single quantum well (SQW) light emitting diodes (LED’s) has been carefullyinvestigated over a wide temperature range (T = 15-300 K) and as a function of injection current level(0.1-10 mA). It is found that, when T is decreased slightly to 140 K, the EL intensity efficiently increasesdue to reduced non-raiative recombination processes. However, further decrease of T below 100 K, itdrastically decreases due to the reduced carrier capturing by the localized recombination centers andshows a clear trend of saturation, accompanying decreases of the EL differential efficiency. Theseresults are analyzed within a context of rate equation model assuming a finite number of radiativerecombination centers.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}],"givenNames":[{"givenName":"Akihiro","givenNameLang":"en"},{"givenName":"昭泰","givenNameLang":"ja"},{"givenName":"アキヒロ","givenNameLang":"ja-Kana"}]},{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}],"givenNames":[{"givenName":"Kenzo","givenNameLang":"en"},{"givenName":"賢三","givenNameLang":"ja"},{"givenName":"ケンゾウ","givenNameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"Wiley"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/1521-396X(200207)192:1<44::AID-PSSA44>3.0.CO;2-4","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2002 WILEY-VCH Verlag GmbH & Co., physica status solidi(a),192,1,p44-48"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00773453","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1862-6319","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"0031-8965","subitem_source_identifier_type":"PISSN"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hori, A","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yasunaga, D","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Satake, Akihiro","creatorNameLang":"en"},{"creatorName":"佐竹, 昭泰","creatorNameLang":"ja"},{"creatorName":"サタケ, アキヒロ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-22"}],"displaytype":"detail","filename":"MsNew-ISBLLED_SQW-LED_.pdf","filesize":[{"value":"55.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MsNew-ISBLLED_SQW-LED_.pdf","url":"https://kyutech.repo.nii.ac.jp/record/149/files/MsNew-ISBLLED_SQW-LED_.pdf"},"version_id":"848432f5-1368-4649-b3f5-c9e56d48b7a1"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"73.50.Gr","subitem_subject_scheme":"Other"},{"subitem_subject":"78.60.Fi","subitem_subject_scheme":"Other"},{"subitem_subject":"78.67.De","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-11-22"},"publish_date":"2007-11-22","publish_status":"0","recid":"149","relation_version_is_last":true,"title":["Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-11-15T07:54:00.960251+00:00"}