@article{oai:kyutech.repo.nii.ac.jp:00000151,
 author = {Inada, T and Satake, Akihiro and 佐竹, 昭泰 and Fujiwara, Kenzo and 藤原, 賢三},
 issue = {7},
 journal = {Physica status solidi. C, Current topics in solid state physics},
 month = {Jun},
 note = {The electroluminescence (EL) spectral intensity has been investigated in the high-brightness green InGaNmultiple-quantum-well light emitting diode (LED) in comparison with the single-quantum-well LED overa wide temperature range and as a function of injection current. It is found that the EL variation patternwith temperature and current is dramatically improved when the number of active wells increases as a resultof enhanced carrier capture. The importance of vertical carrier capture processes is pointed out to explainthe anomalous EL intensity variations at low temperatures.},
 pages = {2768--2771},
 title = {Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes},
 volume = {4},
 year = {2007},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}