@article{oai:kyutech.repo.nii.ac.jp:00000155,
 author = {Fujiwara, Kenzo and 藤原, 賢三 and Grahn, H.T. and Schrottke, L and Ploog, K.H.},
 issue = {2-3},
 journal = {Physica E: Low-dimensional Systems and Nanostructures},
 month = {Oct},
 note = {Exciton radiative recombination properties of an electronically isolated triple GaAs quantum well(QW) with different thicknesses prepared by growth-interrupted molecular beam epitaxy have beeninvestigated with respect to the effect of growth islands present in each QW. When cold excitons with anegligible center-of-mass motion are resonantly photoexcited within each dominant island terrace, the PLdynamics of the split exciton lines reflect the exciton intra-well transfer towards the wider-well terraces.However, dramatic changes are observed in both the PL intensity distribution and the dynamics betweenthe QW’s as well as between the island terraces under resonant excitation into an excited (n = 2) state ofthe widest well located just below the barrier band edge. We tentatively attribute the origin of thesechanges to the different exciton relaxation pathways in terms of center-of-mass kinetic motion of thetwo-dimensional excitons.},
 pages = {215--218},
 title = {Time-resolved photoluminescence of a triple GaAs quantum well with growth islands under resonant photoexcitation into the ground and excited states},
 volume = {11},
 year = {2001},
 yomi = {フジワラ, ケンゾウ}
}