{"created":"2023-05-15T11:55:17.594030+00:00","id":155,"links":{},"metadata":{"_buckets":{"deposit":"0de204d1-f58c-4a81-b0cf-848e10a64b54"},"_deposit":{"created_by":3,"id":"155","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"155"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000155","sets":["8:9"]},"author_link":["757","759","758","1138"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2-3","bibliographicPageEnd":"218","bibliographicPageStart":"215","bibliographicVolumeNumber":"11","bibliographic_titles":[{"bibliographic_title":"Physica E: Low-dimensional Systems and Nanostructures"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Exciton radiative recombination properties of an electronically isolated triple GaAs quantum well(QW) with different thicknesses prepared by growth-interrupted molecular beam epitaxy have beeninvestigated with respect to the effect of growth islands present in each QW. When cold excitons with anegligible center-of-mass motion are resonantly photoexcited within each dominant island terrace, the PLdynamics of the split exciton lines reflect the exciton intra-well transfer towards the wider-well terraces.However, dramatic changes are observed in both the PL intensity distribution and the dynamics betweenthe QW’s as well as between the island terraces under resonant excitation into an excited (n = 2) state ofthe widest well located just below the barrier band edge. We tentatively attribute the origin of thesechanges to the different exciton relaxation pathways in terms of center-of-mass kinetic motion of thetwo-dimensional excitons.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal 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ケンゾウ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/S1386-9477(01)00206-5","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.sciencedirect.com/science/journal/13869477"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.sciencedirect.com/science/journal/13869477","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2001 Elsevier Science B.V."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1386-9477","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Kyushu Institute of Technology, Tobataku, Kitakyushu 804-8550, Japan"},{"subitem_text_value":"Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5–7, 10117 Berlin, Germany"},{"subitem_text_value":"Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5–7, 10117 Berlin, Germany"},{"subitem_text_value":"Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5–7, 10117 Berlin, Germany"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Grahn, H.T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Schrottke, L"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ploog, K.H."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-11-26"}],"displaytype":"detail","filename":"ARW_PHYSE_KF.pdf","filesize":[{"value":"155.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ARW_PHYSE_KF.pdf","url":"https://kyutech.repo.nii.ac.jp/record/155/files/ARW_PHYSE_KF.pdf"},"version_id":"09c94a95-064a-4a6e-8a44-1843667d03cf"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Semiconductor quantum well","subitem_subject_scheme":"Other"},{"subitem_subject":"Photoluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"Exciton","subitem_subject_scheme":"Other"},{"subitem_subject":"Relaxation dynamics","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Time-resolved photoluminescence of a triple GaAs quantum well with growth islands under resonant photoexcitation into the ground and excited states","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Time-resolved photoluminescence of a triple GaAs quantum well with growth islands under resonant photoexcitation into the ground and excited states"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-11-26"},"publish_date":"2007-11-26","publish_status":"0","recid":"155","relation_version_is_last":true,"title":["Time-resolved photoluminescence of a triple GaAs quantum well with growth islands under resonant photoexcitation into the ground and excited states"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:36:33.631175+00:00"}