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Exciton localization dynamics due to intrinsic interface defects within growth island terraces of all-binary GaAs/AlAs quantum wells
http://hdl.handle.net/10228/401
http://hdl.handle.net/10228/4013308d5a3-415a-4fa7-a511-d98df02f72cf
| 名前 / ファイル | ライセンス | アクション |
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ICDS21_KF_PhysicaB,TR-PL.pdf (28.5 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2007-11-26 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Exciton localization dynamics due to intrinsic interface defects within growth island terraces of all-binary GaAs/AlAs quantum wells | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
藤原, 賢三
× 藤原, 賢三× Ploog, K.H |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The localization dynamics of excitons within growth island terraces of a narrow GaAs singlequantum well confined by all-binary GaAs/AlAs short-period superlattices is investigated bytime-resolved photoluminescence (PL) spectroscopy. Under resonant photoexcitation into the groundlight-hole exciton state of the dominant terrace, as confirmed by PL excitation spectra, we clearlyobserve an enhancement of the fundamental free heavy-hole exciton emission as well as the localizedexcitons associated with the terrace. The time evolution of the split PL line-shape indicates thecoexistence of distinct free and localized excitons in the ps time domain, revealing transfer from the freeto localized excitons within the terrace in addition to the transfer between the island terraces. Theseresults directly evidence that the binary-binary heteroinferace contains intrinsic interface defects withinthe terraces and that the split PL line-shape dynamically evolves due to confinement potentialfluctuations on the island terraces in agreement with the bimodal interface nano-roughness model. | |||||
| 書誌情報 |
Physica B: Condensed Matter 巻 308-310, p. 765-768, 発行日 2001-12 |
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| 出版社 | ||||||
| 出版者 | Elsevier | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/S0921-4526(01)00832-8 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright (c) 2001 Elsevier Science B.V. | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | GaAs quantum well | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Interface defects | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Photoluminescence | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Exciton | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 情報源 | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.sciencedirect.com/science/journal/09214526 | |||||
| 関連名称 | http://www.sciencedirect.com/science/journal/09214526 | |||||
