@article{oai:kyutech.repo.nii.ac.jp:00000158,
 author = {Hori, A and Yasunaga, D and Satake, Akihiro and 佐竹, 昭泰 and Fujiwara, Kenzo and 藤原, 賢三},
 journal = {Physica B: Condensed Matter},
 month = {Dec},
 note = {Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright greenInGaN single quantum well (SQW) light emitting diodes (LED’s), fabricated by Nichia ChemicalIndustry Ltd, has been studied over a wide temperature range (T = 15-300 K) and as a function ofinjection current level. It is found that, when T is decreased slightly to 140 K, the EL intensity efficientlyincreases probably due to reduced non-raiative recombination processes and/or increased carrier captureby the localized radiative recombination centers. However, decreasing T, furthermore, down to 15 K, itdrastically decreases due to the reduced carrier capture and population, accompanying disappearance ofinjection current dependent line-shape changes (blue-shift) caused by band-filling of the localizedrecombination centers. These results indicate that the efficient carrier capture by SQW is crucial toenhance the radiative recombination of injected carriers in the presence of the high dislocation density.},
 pages = {1193--1196},
 title = {Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes},
 volume = {308-310},
 year = {2001},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}