@article{oai:kyutech.repo.nii.ac.jp:00001588,
 author = {Kurosaki, Jun-ichiro and Yamamoto, Akihiro and Tanaka, Saburo and Cannon, James and Miyazaki, Koji and 宮崎, 康次 and Tsukamoto, Hiroshi and 塚本, 寛},
 issue = {7},
 journal = {Journal of Electronic Materials},
 month = {Jul},
 note = {Using shadow masks prepared by standard microfabrication processes, wefabricated in-plane thermoelectric microdevices (4 mm 9 4 mm) made ofbismuth telluride thin films, and evaluated their performance. We usedBi0.4Te3.0Sb1.6 as the p-type semiconductor and Bi2.0Te2.7Se0.3 as the n-typesemiconductor. We deposited p- and n-type thermoelectric thin films on afree-standing thin film of Si3N4 (4 mm 9 4 mm 9 4 lm) on a Si wafer, andmeasured the output voltages of the microdevices while heating at the bottomof the Si substrate. The maximum output voltage of the thermoelectric devicewas 48 mV at 373 K.},
 pages = {1326--1330},
 title = {Fabrication and Evaluation of a Thermoelectric Microdevice on a Free-Standing Substrate},
 volume = {38},
 year = {2009},
 yomi = {ミヤザキ, コウジ and ツカモト, ヒロシ}
}