@article{oai:kyutech.repo.nii.ac.jp:00000160,
 author = {Ohe, M and Matsuo, M and Nogami, T and Fujiwara, Kenzo and 藤原, 賢三 and Okamoto, H},
 journal = {Microelectronic Engineering},
 month = {May},
 note = {Photoluminescence properties of a quantum system consisting of four different sizeGaAs quantum wells (Lz=15, 7, 4.5 and 3 nm) clad by 50 nm thick Al0.24Ga0.76Asbarriers have been investigated by steady-state and time-resolved (TR)photoluminescence (PL) experiments at 13-300 K. It is found that the low temperaturePL emission energy distribution is not uniform over the four excitonic emission bandsand different from that expected for thermalized carriers at higher temperatures above260 K. TR-PL measurements indicate that the non-uniform PL intensity distributionobserved at low temperatures is a result of non-uniform quantum capture processes ofphotoexcited carriers.},
 pages = {135--142},
 title = {Photoluminescence properties of a quantum system consisting of different size GaAs quantum wells},
 volume = {51-52},
 year = {2000},
 yomi = {フジワラ, ケンゾウ}
}