@article{oai:kyutech.repo.nii.ac.jp:00000162,
 author = {Hori, A and Yasunaga, D and Fujiwara, Kenzo and 藤原, 賢三},
 issue = {10},
 journal = {Thin Solid Films},
 month = {Mar},
 note = {Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaNsingle-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range andas a function of injection current. When the necessary forward bias conditions to get a certain currentlevel are different, it is found that the anomalous EL quenching previously observed below 100 K for theSQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes.This unusual EL evolution pattern is attributed to both internal and external fields, suggesting importanceof the internal piezoelectric field effects on the efficient carrier capture processes by localized tail stateswithin SQW under the presence of high-density misfit dislocations.},
 pages = {4480--4483},
 title = {Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes: a comparative study},
 volume = {515},
 year = {2007},
 yomi = {フジワラ, ケンゾウ}
}