@article{oai:kyutech.repo.nii.ac.jp:00000163,
 author = {Machida, S and Matsuo, M and Fujiwara, Kenzo and 藤原, 賢三 and Jensen, J.R. and Hvam, J.M.},
 issue = {2-4},
 journal = {Physica E: Low-dimensional Systems and Nanostructures},
 month = {Mar},
 note = {Perpendicular motion of photoexcited electron and hole pairs assisted by phonon scattering isinvestigated in a novel step-graded staircase heterostructure consisting of strainedInX(Al0.17Ga0.83)1-XAs multiple quantum wells (QWs) with similar widths but different five x valuesby cw and time-resolved photoluminescence (PL) experiments. From the temperature dependence ofPL spectral intensity of distinct five peaks corresponding to the QW layers, we find that, astemperature increases, the PL peaks decrease their relative intensities progressively from shorterwavelength sides after increasing the signal amplitude in the intermediate temperature range. Thesevariations reveal that the photoexcited carriers directionally move from shallower to deeper QWs viaphonon-assisted activation above the barrier band edge state. The PL dynamics directly indicate theperpendicular flowing of photoexcited carriers and the capture by the deeper QW, thus providing firmevidences for the dynamical carrier flow and capture processes.},
 pages = {182--185},
 title = {Directional phonon-assisted cascading of photoexcited carriers in stepped InX(Al0.17Ga0.83)1-XAs/ Al0.17Ga0.83As multiple quantum wells},
 volume = {13},
 year = {2002},
 yomi = {フジワラ, ケンゾウ}
}