{"created":"2023-05-15T11:56:25.041560+00:00","id":1658,"links":{},"metadata":{"_buckets":{"deposit":"7fdc4619-79cc-400a-a714-563b0291b695"},"_deposit":{"created_by":3,"id":"1658","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1658"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001658","sets":["8:24"]},"author_link":["6721","219","6720","6717","6718"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"1986","bibliographicPageStart":"1979","bibliographicVolumeNumber":"602","bibliographic_titles":[{"bibliographic_title":"Surface Science"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θD. On the other hand, the indirect abstraction to form D2 molecules obeys a fourth-order rate law in θD. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D2 desorption exhibits time profiles different from those on the Si(1 0 0) surfaces.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Namiki","familyNameLang":"en"},{"familyName":"並木","familyNameLang":"ja"},{"familyName":"ナミキ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Akira","givenNameLang":"en"},{"givenName":"章","givenNameLang":"ja"},{"givenName":"アキラ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"219","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"40126941","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000040126941"},{"nameIdentifier":"55806005100","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=55806005100"}],"names":[{"name":"Namiki, Akira","nameLang":"en"},{"name":"並木, 章","nameLang":"ja"},{"name":"ナミキ, アキラ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.susc.2008.03.048","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.sciencedirect.com/science/journal/00396028"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.sciencedirect.com/science/journal/00396028","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2008 Elsevier B.V. All rights reserved."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0039-6028","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Electrical Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Electrical Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Electrical Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Center for Interdisciplinary Research, Tohoku University"},{"subitem_text_value":"Center for Interdisciplinary Research, Tohoku University"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"4EF778E394E1E7554925764000103A0E"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Khan, A. R"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Narita, Y"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Namiki, Akira","creatorNameLang":"en"},{"creatorName":"並木, 章","creatorNameLang":"ja"},{"creatorName":"ナミキ, アキラ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Kato, A"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Suemitsu, M"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-09-29"}],"displaytype":"detail","filename":"Adsorption.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Adsorption.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1658/files/Adsorption.pdf"},"version_id":"40a05ef9-a901-4cbf-bf84-f77785505e0d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"FTIR","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermal desorption","subitem_subject_scheme":"Other"},{"subitem_subject":"Plasma processing","subitem_subject_scheme":"Other"},{"subitem_subject":"Atom-solid interactions","subitem_subject_scheme":"Other"},{"subitem_subject":"Momentary coverages","subitem_subject_scheme":"Other"},{"subitem_subject":"Time response","subitem_subject_scheme":"Other"},{"subitem_subject":"H-sticking; Hot complex","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-09-29"},"publish_date":"2009-09-29","publish_status":"0","recid":"1658","relation_version_is_last":true,"title":["Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T06:05:51.023709+00:00"}